FQA46N15 Allicdata Electronics
Allicdata Part #:

FQA46N15FS-ND

Manufacturer Part#:

FQA46N15

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 150V 50A TO-3P
More Detail: N-Channel 150V 50A (Tc) 250W (Tc) Through Hole TO-...
DataSheet: FQA46N15 datasheetFQA46N15 Datasheet/PDF
Quantity: 421
Stock 421Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 42 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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FQA46N15 is a high voltage, rise time optimized N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is available in both dual transistor and single transistor packages.

A MOSFET is a type of transistor, which is a semiconductor device used to amplify or switch electronic signals and electrical power. MOSFETs are part of the family of Field Effect Transistors (FETs) in which the current flowing between the source and drain of the device is controlled by the electric field generated by the gate of the device.

FQA46N15 can be used in various applications, such as in power amplification, DC-DC buck/boost converters, Class-D audio amplifiers, motor control, motion control, and other high voltage power management applications. The FQA46N15 is capable of delivering up to 2.7 A (average) and 3 A (peak) in terms of current drive.

FQA46N15 has a lower on-resistance (RDS(on)) than other similar MOSFETs. It is designed to have a low total gate charge (Qg) in order to minimize switching losses, leading to higher efficiency and smaller overall solution size. This makes the FQA46N15 ideal for power applications that require high frequency operation and short switching times.

The main advantage of FQA46N15 is its low input capacitance (Ciss) - it allows faster input response, meaning faster turn-on times. In a MOSFET, the input capacitance is determined by the overlap between the gate and the drain region. The FQA46N15 has a special epitaxial structure that reduces this overlap, resulting in a lower Ciss and therefore faster switching speeds. Additionally, its surface mount package design allows for higher current density solutions.

The working principle of the FQA46N15 transistor is simple. A voltage is applied to the gate terminal, causing the current to flow through the source and drain terminals, which is controlled by the gate voltage. The higher the gate voltage, the higher the current that is allowed to flow through the device. The channel between the source and drain terminals will remain open until the voltage is removed from the gate.

Overall, the FQA46N15 is a great option for use in high voltage, high current power applications. Its low on-resistance, low input capacitance and low total gate charge make it ideal for faster, higher efficiency systems and designs. Its small package size also makes it easy to integrate into a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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