| Allicdata Part #: | FQA47P06-ND |
| Manufacturer Part#: |
FQA47P06 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 60V 55A TO-3PN |
| More Detail: | P-Channel 60V 55A (Tc) 214W (Tc) Through Hole TO-3... |
| DataSheet: |  FQA47P06 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3PN |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 214W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 26 mOhm @ 27.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The FQA47P06 is a single P-Channel enhancement mode Field Effect Transistor (FET) which belongs to the FQA series from Fairchild Semiconductor. This transistor is available in a TO-92 package and is intended for surface mount applications. It has a high current capability of 47A, operating at a maximum voltage rating of 6V.
Like many FETs, the FQA47P06 is a three-terminal semiconductor device, composed of semiconductor material, usually silicon. Its structure is similar to the construction of a MOSFET, with two field effect terminals and one source terminal. The FET is designed to amplify and switch the voltage and current signals between the gate and source terminals.
The purpose of the FQA47P06 is to act as a current amplifier. This is accomplished through the principle of Gate-Voltage control. When a small positive voltage is applied to the Gate terminal, it in turn creates an electric field that modulates the conductivity of the semiconductor material between the source and drain terminals. By varying the amount of Gate voltage, the amount of current that can flow through the transistor can be controlled.
The FQA47P06 can be utilized in various electronic applications such as heating elements, light dimmers, inversion circuits and power supply switching. It is frequently used as a control switch for P-Channel MOSFETS and is also often found in servo control systems.
If you need a transistor that can withstand high current and voltage, the FQA47P06 is an ideal choice. It has a low drain-to-gate capacitance and high on-state resistance for efficient signal control. It has a low on-resistance and low gate threshold voltage, which makes it suitable for a variety of applications. Additionally, due to its compatibility with surface mount technology, it is often seen in commercial and industrial applications.
In conclusion, the FQA47P06 is a high quality single P-Channel enhancement mode Field Effect Transistor. It is designed with a low drain-to-gate capacitance, high on-state resistance, and low on-resistance as well as low gate threshold voltage, which make it an ideal choice for various electronic applications. Whether it’s used in heating elements, inverters, or servo control systems, the FQA47P06 is sure to deliver superior performance.
The specific data is subject to PDF, and the above content is for reference
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