FQA65N20

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The FQA65N20 is a high-voltage field-effect transistor, more commonly referred to as a MOSFET, specifically a power Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It has a single structure, a structure consisting of three terminals – drain, source, and gate.

Application Field

The FQA65N20 is typically used in power supply, motor control, socket, and other applications requiring high input and temperature performance. It can also be used in automotive, off-line applications, as it features a wide operating temperature range of -55°C to +175°C. For all these applications, since it is a single device, the user can benefit from a reduced system size and improved performance.

Working Principle

The FQA65N20 utilizes a reversed-bias drain-source diode to over-task and switch high reliability. Specifically, when an electric current is applied between the source and the gate terminals of the FQA65N20, a transconductor effect is created which will result in the source terminal generating a source-drain voltage. This voltage, in turn, will form in the drain-source diode in a reversed-bias direction, which will protect the FQA65N20 from over-current and over-voltage. A further advantage of using the FQA65N20 is that the source terminal is capable of releasing the generated source-drain voltage, allowing for high-power applications.

As for the energy consumption of the FQA65N20, its low on-state resistance and low input capacitance ensure that the device operates efficiently, with very little energy waste. This low-power consumption is especially important for high-voltage applications, where power utilization is a major concern.

Furthermore, the FQA65N20 features a thermal protection mechanism which allows the device to self-protect from overexposed temperatures. This thermal protection mechanism is enabled by thermal shutdown circuitry which will immediately turn-off the device when current temperature reaches a certain limit. In addition to its thermal protection, the FQA65N20 is also equipped with some advanced protection functions, such as surge-current protection and fault current limiters.

In summary, the FQA65N20 is a high-voltage field-effect transistor with a single structure, that is typically used in power supply, motor control, socket, and other applications requiring high input and temperature performance. It utilizes a reversed-bias drain-source diode to over-task and switch high reliability, while boasting low on-state resistance and input capacitance for energy-efficient operation. It also has a number of additional advanced protective functions, such as thermal shutdown circuitry, surge-current protection, and fault current limiters.

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