Allicdata Part #: | FQA6N70-ND |
Manufacturer Part#: |
FQA6N70 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 700V 6.4A TO-3P |
More Detail: | N-Channel 700V 6.4A (Tc) 152W (Tc) Through Hole TO... |
DataSheet: | FQA6N70 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 152W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 3.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.4A (Tc) |
Drain to Source Voltage (Vdss): | 700V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQA6N70 application field and working principle
FQA6N70 is a kind of Field Effect Transistor, which is commonly referred to as MOSFET, with a single gate on the surface of the silicon chip. FQA6N70 can control the current and voltage in a circuit just like a valve, this enables it to be used in various applications including power switching, amplifier circuits, switching regulators and RF signal amplifiers.
Application Field
FQA6N70 can be used in many different application fields, including:
- Power switching: FQA6N70 can be used as a power switch, controlling the flow of electrical power as needed. It is commonly used as a switch in AC mains circuits, and in power supplies, such as switch mode power supplies (SMPS) and DC-DC converters.
- Amplifier circuits: FQA6N70 can be used as a voltage amplifier, which is used to increase the voltage of a signal. FQA6N70 is able to amplify weak signals, allowing for more efficient communication.
- Switching regulators: FQA6N70 can be used as a switching regulator, which is responsible for controlling the power supply of the circuit. This allows for more efficient power management, making devices more energy efficient.
- RF signal amplifiers: FQA6N70 can be used as a radio frequency (RF) signal amplifier. This enables it to amplify weak RF signals and create stronger ones, increasing the range and accuracy of the signal.
Working Principle
The working principle of FQA6N70 is based on the gate terminal, which is the main control element of the MOSFET. The gate terminal is used to control the flow of current between the source and drain terminals. When a positive voltage is applied to the gate terminal, a current will flow between the source and drain. This is known as the “on” state. When the gate voltage is decreased, the current will stop flowing, which is known as the “off” state.
FQA6N70 also has a high voltage breakdown capability, which means that it is able to handle higher voltages than typical MOSFETs. The breakdown voltage is typically in the range of 20V-30V, allowing it to be used in high voltage circuits. This makes it useful for applications such as providing power to motors and lights.
In addition, FQA6N70 is also able to handle a high current load. Its maximum drain current rating is typically in the range of 10-20A, which makes it suitable for applications that require large amounts of power.
Finally, FQA6N70 is also able to handle a high frequency range, which makes it suitable for RF circuits. Its frequency range is typically up to 100MHz, which makes it useful for high frequency applications, such as RF signal amplifiers.
Overall, FQA6N70 is a versatile MOSFET with many applications, due to its wide range of features. It is particularly useful for power switching, amplifier circuits, switching regulators and RF signal amplifiers, due to its high voltage breakdown capability, high current load, and high frequency range.
The specific data is subject to PDF, and the above content is for reference
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