Allicdata Part #: | FQA6N80-ND |
Manufacturer Part#: |
FQA6N80 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 6.3A TO-3P |
More Detail: | N-Channel 800V 6.3A (Tc) 185W (Tc) Through Hole TO... |
DataSheet: | FQA6N80 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 185W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.95 Ohm @ 3.15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.3A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQA6N80 is a high-power MOSFET that utilizes advanced planar process technology to transform its structure as well as its electrical properties. This device has become popular in a wide range of applications due to its performance and efficiency. This article will discuss the application field and working principle of the FQA6N80.
The FQA6N80 is an N-channel power MOSFET which is commonly used for switching applications at voltages ranging from 50V to 800V. It is capable of providing high current handling and high power dissipation. Furthermore, it possesses low gate-charge and low on-resistance. This makes it ideal for powering high-current, high-power inverters and motor drivers. The FQA6N80 is sometimes used in designing power supply circuits and voltage converters. It is also found in motor control and power management circuitries in various devices.
The working principle of the FQA6N80 is pretty simple. It consists of three terminal devices; the source, the drain, and the gate. The gate is where voltage is applied to activate the device. When the device is turned on, electrons will flow from the source to the drain. This current is determined by the voltage applied to the gate. When the device is turned off, the flow of electrons is blocked and the gate voltage is reduced to an off-state.
The FQA6N80 has unique operating characteristics that make it suitable for many applications. It has a very low gate charge, allowing for faster switching speed. Additionally, it has low on-resistance that reduces both power dissipation and conduction losses. This results in higher efficiency and greater power handling capabilities.
The FQA6N80 is a high-power MOSFET which is suitable for many applications. It offers low gate charge and low on-resistance, resulting in faster switching speeds and higher efficiency. Additionally, it is capable of handling high-current and high-power inverters and motor drivers, which makes it ideal for power supply circuits, voltage converters, motor control and power management circuitries.
The specific data is subject to PDF, and the above content is for reference
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