Allicdata Part #: | FQA6N90C-F109-ND |
Manufacturer Part#: |
FQA6N90C-F109 |
Price: | $ 2.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 6A TO-3P |
More Detail: | N-Channel 900V 6A (Tc) 198W (Tc) Through Hole TO-3... |
DataSheet: | FQA6N90C-F109 Datasheet/PDF |
Quantity: | 393 |
1 +: | $ 2.16090 |
10 +: | $ 1.93095 |
450 +: | $ 1.42892 |
900 +: | $ 1.15858 |
1350 +: | $ 1.08135 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 198W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1770pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 2.3 Ohm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FQA6N90C-F109 is a high-power, high-performance MOSFET (Metal Oxide Semiconductor Field Effect Transistor). MOSFETs are a type of transistor and their advantages include low voltage drop, high switching speed, high input impedance and low noise characteristics. As such, they are commonly used for applicaitons such as power conversion, motor control, audio amplification and RF switching. FQA6N90C-F109 is a specific model of the MOSFET which can be used in a variety of applications.
The FQA6N90C-F109 is a N-Type MOSFET, also referred to as an “NMOS” MOSFET. N-type MOSFETs are used when a negative voltage is applied to the gate, causing current to flow between the drain and source. NMOS MOSFETs are commonly used in applications such as voltage regulation, inversion, motor control, sound amplification, power conversion and RF switching.
The FQA6N90C-F109 is a relatively large MOSFET with a drain current of 9A and drain to source voltage of 90V. It has a maximum power dissipation of 307W and an on-resistance of 1.7mOhms. It has a switching speed of 750V/us, making it suitable for high frequency applications.
The FQA6N90C-F109 is able to handle large amounts of current due to its high drain current, meaning it is suitable for use in power conversion, such as inverters and boost regulators. It is also suitable for use in audio amplification systems, as it is able to handle high power levels and maintain a low noise level. Furthermore, its high input impedance and high switching speed make it suitable for use in RF switching systems.
The FQA6N90C-F109 operates by using the MOSFET’s three terminals. The source is used to provide the current and the drain is used to receive the current. The third terminal, the gate, is used to control the flow of current between the source and the drain. The gate is a voltage controlled switch, which means that the amount of current that flows through the FQA6N90C-F109 is controlled by the voltage that is applied to the gate. A positive voltage applied to the gate will allow current to flow and a negative voltage will inhibit the current.
The FQA6N90C-F109 is versatile, as it can be used in a wide range of applications. Its drain current and drain to source voltage make it suitable for use in power conversion and its switching speed and input impedance make it suitable for use in RF switching systems. Furthermore, its low noise characteristics make it suitable for use in high-fidelity audio applications.
The specific data is subject to PDF, and the above content is for reference
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