FQA6N80_F109 Allicdata Electronics
Allicdata Part #:

FQA6N80_F109-ND

Manufacturer Part#:

FQA6N80_F109

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 800V 6.3A TO-3P
More Detail: N-Channel 800V 6.3A (Tc) 185W (Tc) Through Hole TO...
DataSheet: FQA6N80_F109 datasheetFQA6N80_F109 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: QFET®
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.95 Ohm @ 3.15A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
FET Feature: --
Power Dissipation (Max): 185W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PN
Package / Case: TO-3P-3, SC-65-3
Description

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The FQA6N80_F109 is one of the latest single power MOSFETs from Fairchild Semiconductor. It is designed for use in applications like DC-DC converters, motor control and switch mode power supplies. It has a wide array of features that make it suitable for these applications.

The FQA6N80_F109 has an absolute maximum rating of 800 volts and is capable of carrying up to 82A drain current. It also has a total gate charge of 116nC and an input capacitance of 200pF. This makes it very well suited for applications that require fast switching and high efficiency. It has a P-channel design which makes it very easy to use in both unipolar and bipolar applications.

The FQA6N80_F109 has an on-resistance of 5.6 mΩ which enables it to handle higher power dissipation. This translates into better efficiency for the application. It also has a thermal resistance of 0.3°C/W which is very good for dissipating heat. It also has a very low output capacitance of 9.4pF which helps reduce the losses associated with switching.

The FQA6N80_F109 also has a low forward-bias safe operating area which allows it to withstand higher voltages. This makes it suitable for applications that require the highest power levels. The FQA6N80_F109 features a low gate-to-drain capacitance of 180pF which helps to reduce the losses associated with switching edges.

The FQA6N80_F109 is capable of operating in temperatures ranging from -55°C to 175 °C. This makes it suitable for a wide range of operating environments. The FQA6N80_F109 has an avalanche breakdown voltage rating of up to 400V which makes it suitable for high voltage applications as well.

The basic working principle of the FQA6N80_F109 is that it is a voltage-controlled device. It works by controlling the flow of the current from the source to the drain using the voltage applied to the gate. The gate voltage controls the current flow by changing the conductivity of the channel between the source and the drain. When the gate voltage increases, the conductivity of the channel increases, which increases the current flow from the source to the drain.

The FQA6N80_F109 is suitable for a variety of applications such as DC-DC converters, motor control, switch mode power supplies and other high-power applications. It has an absolute maximum rating of 800 volts and can handle up to 82A drain current. It also features a P-channel design and a low on-resistance which makes it very efficient and easy to use.

The specific data is subject to PDF, and the above content is for reference

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