Allicdata Part #: | FQA6N80_F109-ND |
Manufacturer Part#: |
FQA6N80_F109 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 6.3A TO-3P |
More Detail: | N-Channel 800V 6.3A (Tc) 185W (Tc) Through Hole TO... |
DataSheet: | FQA6N80_F109 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 6.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.95 Ohm @ 3.15A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 185W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3PN |
Package / Case: | TO-3P-3, SC-65-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FQA6N80_F109 is one of the latest single power MOSFETs from Fairchild Semiconductor. It is designed for use in applications like DC-DC converters, motor control and switch mode power supplies. It has a wide array of features that make it suitable for these applications.
The FQA6N80_F109 has an absolute maximum rating of 800 volts and is capable of carrying up to 82A drain current. It also has a total gate charge of 116nC and an input capacitance of 200pF. This makes it very well suited for applications that require fast switching and high efficiency. It has a P-channel design which makes it very easy to use in both unipolar and bipolar applications.
The FQA6N80_F109 has an on-resistance of 5.6 mΩ which enables it to handle higher power dissipation. This translates into better efficiency for the application. It also has a thermal resistance of 0.3°C/W which is very good for dissipating heat. It also has a very low output capacitance of 9.4pF which helps reduce the losses associated with switching.
The FQA6N80_F109 also has a low forward-bias safe operating area which allows it to withstand higher voltages. This makes it suitable for applications that require the highest power levels. The FQA6N80_F109 features a low gate-to-drain capacitance of 180pF which helps to reduce the losses associated with switching edges.
The FQA6N80_F109 is capable of operating in temperatures ranging from -55°C to 175 °C. This makes it suitable for a wide range of operating environments. The FQA6N80_F109 has an avalanche breakdown voltage rating of up to 400V which makes it suitable for high voltage applications as well.
The basic working principle of the FQA6N80_F109 is that it is a voltage-controlled device. It works by controlling the flow of the current from the source to the drain using the voltage applied to the gate. The gate voltage controls the current flow by changing the conductivity of the channel between the source and the drain. When the gate voltage increases, the conductivity of the channel increases, which increases the current flow from the source to the drain.
The FQA6N80_F109 is suitable for a variety of applications such as DC-DC converters, motor control, switch mode power supplies and other high-power applications. It has an absolute maximum rating of 800 volts and can handle up to 82A drain current. It also features a P-channel design and a low on-resistance which makes it very efficient and easy to use.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQA6N80_F109 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 800V 6.3A TO-... |
FQA6N90C-F109 | ON Semicondu... | 2.37 $ | 393 | MOSFET N-CH 900V 6A TO-3P... |
FQA65N06 | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 72A TO-3P... |
FQA6N80 | ON Semicondu... | -- | 1000 | MOSFET N-CH 800V 6.3A TO-... |
FQA6N70 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 700V 6.4A TO-... |
FQA6N90 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 900V 6.4A TO-... |
FQA6N90_F109 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 900V 6.4A TO-... |
FQA62N25C | ON Semicondu... | -- | 550 | MOSFET N-CH 250V 62A TO-3... |
FQA65N20 | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 65A TO-3... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...