| Allicdata Part #: | FQP7N20-ND |
| Manufacturer Part#: |
FQP7N20 |
| Price: | $ 0.92 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 6.6A TO-220 |
| More Detail: | N-Channel 200V 6.6A (Tc) 63W (Tc) Through Hole TO-... |
| DataSheet: | FQP7N20 Datasheet/PDF |
| Quantity: | 1825 |
| 1 +: | $ 0.83790 |
| 10 +: | $ 0.74403 |
| 100 +: | $ 0.58792 |
| 500 +: | $ 0.45592 |
| 1000 +: | $ 0.35993 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 63W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 690 mOhm @ 3.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.6A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The FQP7N20 is a high-voltage and high-speed N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from FQP (Fairchild Semiconductor). It is mainly used as a switch, controlling current in the on and off states, although it can also be used for amplification. It is designed for applications such as power control and motor control and is suitable for switching high currents and high voltages up to a maximum rating of 100 volts and up to 7.0 amps.
Features
The FQP7N20 MOSFET has some exceptional features that make it suitable for a range of applications. It has an extremely low on-resistance of 0.032 Ω (ohm) max, allowing it to achieve high-speed switching. It has a maximum drain-source breakdown voltage of 100 V and a fast switching speed of 17ns. Additionally, it has a low gate charge of 12.8 sq.coulombs and a maximum gate-source voltage of 20 V. Its high current and voltage handling capacity makes it suitable for a wide range of applications.
Application Fields
The FQP7N20 MOSFET is widely used in automotive applications due to its high-power and high-efficiency characteristics. It is also often used in the control of DC motors, such as in motor drives and automotive motor controllers. In industrial applications, it can be used for applications such as welding and control of switching power supplies. Additionally, the FQP7N20 can be used in guitar pedal applications due to its fast switching speed and low on-resistance.
Working Principle
The FQP7N20 MOSFET works on the principle of a field-effect transistor. When a Gate voltage is applied, an Electric Field is applied to the channel of the transistor. This Electric Field attracts charge carriers to the channel, thus allowing current to flow between the Drain and Source terminals. When the Gate voltage is removed, the Electric Field is switched off and the charge carriers are no longer attracted to the channel. Thus, the current flow is stopped and the FET is switched off.
The FQP7N20 MOSFET can be used as a switch due to its rapid switching speed. This makes it ideal for use in applications where current needs to be switched quickly and efficiently. Due to its high current and voltage handling capabilities, it can also be used for applications such as welding and control of motors.
Conclusion
The FQP7N20 MOSFET is a high-power and high-speed N-channel MOSFET that is suitable for a wide range of applications. It has a low on-resistance and fast switching speed, making it ideal for use as a switch. Additionally, its high current and voltage handling makes it suitable for applications such as welding and control of motors. Therefore, the FQP7N20 is a versatile and powerful MOSFET that can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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FQP7N20 Datasheet/PDF