FQP7N80

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	167W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1850pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	52nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	1.5 Ohm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6.6A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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<p>The FQP7N80 is a Field-Effect Transistor (FET) that is specifically designed for high-power applications. It is an N-channel enhancement-mode lateral MOSFET and is capable of switching large currents in a wide range of operating conditions. This type of silicon transistor is an excellent choice for amplifying circuits and power regulation. The device features an optimized structure, low gate charge, and low gate input capacitance ratio, all of which make it ideal for use in high-current and high-voltage power supply rail applications.</p><p>The FQP7N80 has a number of features that make it the ideal choice for higher power applications. It has a dual gate threshold voltage of 4 V, enabling it to be used in a wider range of power circuits than other transistors. Its drain current rating is 8amps, making it a great choice for powering LED lighting and other DC-operated devices. The device also boasts a 5nA gate input capacitance and a 13.5V drain breakdown voltage.</p><p>The FQP7N80 uses Metal Oxide Semiconductor field-effect technology. This technology is based on the principle of producing a one-directional current in a semiconductor material when a potential difference is applied across it. The technology works by using a MOSFET, which is essentially a transistor with two gates, one of which is an insulated gate and the other an external gate. When a voltage is applied to the insulated gate, it charges the semiconductor material, thus creating an electric field that allows current to flow.</p><p>!The FQP7N80 is extremely versatile, making it an excellent choice for a wide range of applications. It can be used in power switching, voltage regulation, and signal-processing circuits. It is also suitable for DC-DC converters, high-current power supply applications, power switching and voltage regulation, as well as audio amplifiers, switching regulators, and digital-to-analog converters. The device also offers excellent high-temperature reliability and frequency characteristics, making it suitable for various applications which require high-frequency operation.</p><p>The FQP7N80 is a great choice for applications that require high-power, large-current switching, and exceptional frequency characteristics. It is an N-channel enhancement-mode lateral MOSFET and its features make it the ideal choice for numerous power-regulation and amplifying circuits. Also, its low gate charge and low gate input capacitance makes it ideal for high-current and high-voltage power supply rail applications.</p>

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