Allicdata Part #: | FQP7P20-ND |
Manufacturer Part#: |
FQP7P20 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 200V 7.3A TO-220 |
More Detail: | P-Channel 200V 7.3A (Tc) 90W (Tc) Through Hole TO-... |
DataSheet: | FQP7P20 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 690 mOhm @ 3.65A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.3A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQP7P20 is a device from Fairchild Semiconductor that belongs to a type of transistor known as an Insulated Gate Field-Effect Transistor (IGFET) or specifically a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). As a switched-mode device, it requires very low power to operate, so it\'s used in a variety of applications for the purpose of performing analog and digital operations. MOSFETs are very popular in the electronics industry due to their low power dissipation, low cost, and minimal physical size when compared to other types of transistors.
The FQP7P20 has a maximum drain current of 30mA and a drain source voltage of 30V. This makes it ideal for applications requiring high current gain and small signal amplification. With its relatively low resistance, it is often used as a switch for controlling power or signal switching in audio and video applications. Additionally, it is used in integrated circuits for high frequency switching applications as well.
The working principle of the FQP7P20 is fairly straightforward. When an external voltage is applied to the drain-source drain, it creates a channel between the source and drain. This channel is basically a conducting region where the current passes through. A control voltage applied to the gate then determines the resistance of the channel and subsequently the flow of current.
When the gate voltage is positive with respect to the source, it forms a low resistance channel between the source and drain so that current is allowed to flow freely. This is known as the "on" state. When the voltage on the gate is negative with respect to the source, it forms a high resistance channel between the source and drain, thus blocking the current flow. This is known as the "off" state.
The FQP7P20 is used in a variety of applications due to its low power dissipation, minimal physical size and its ability to switch quickly between two states. It is used in many consumer electronics such as CD, DVD players and computer monitors, as well as other applications such as motor speed controllers and analog audio amplifiers.
The FQP7P20 is also utilized for RF (Radio Frequency) switching applications due to its low resistance, fast switching time and low noise characteristics. This makes it ideal for the design of various kinds of RF amplifiers and antenna switches. Its low power dissipation also makes it a suitable choice for battery powered applications where energy conservation is a priority.
In summary, the FQP7P20 is an Insulated Gate Field-Effect Transistor (IGFET) or MOSFET designed specifically for low power consumption, high current and small signal gain applications. It is commonly used in consumer electronics, RF switching, motor controllers, and analog audio amplifiers to perform various kinds of operations. The way it works is relatively simple; an external voltage is applied to the drain-source drain which forms a channel between the source and drain. The resistance of the channel is then controlled by a voltage applied to the gate.
The specific data is subject to PDF, and the above content is for reference
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