Allicdata Part #: | FQP7N60-ND |
Manufacturer Part#: |
FQP7N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 7.4A TO-220 |
More Detail: | N-Channel 600V 7.4A (Tc) 142W (Tc) Through Hole TO... |
DataSheet: | FQP7N60 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 142W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1430pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 3.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQP7N60 is an N-channel Field Effect Transistor (FET) with a unique castellation package which was developed, in particular, to meet the requirements of high-speed switching applications. This device is suitable for use in consumer and industrial motor control, automotive and robotic applications.
The FQP7N60 is a single-chip power MOSFET integrated circuit that consists of a single MOSFET cell and a few external components laid out in a castellation sot-23 standard configuration. It is designed for low noise and high performance operation, and is capable of operating at frequencies up to 100 MHz. Its low on-state resistance and low gate threshold voltage make it suitable for high-powered applications such as motor control and robotic actuation.
The working principles behind the FQP7N60 rely upon the MOSFET technology that powers it. MOSFETs are based on the principles of operation of field-effect transistors (FETs). As a semiconductor device, FETs are made of two or more doped regions (or "layers") of either p-type or n-type semiconductor material. The MOSFET uses a gate voltage to control the current flow between its source and drain regions.
Once the gate voltage is applied, electrons move from the source to the drain and create an electric field which controls the current flow. The FQP7N60 improves MOSFET operation by integrating a single MOSFET cell with a few other components. The castellation sot-23 package allows for an efficient and compact form factor.
The FQP7N60 is an effective choice for high-powered applications due to its low on-state resistance and low gate threshold voltage. It has a low capacitive charge which makes it suitable for high-frequency electrical circuits. In addition, it is designed for low noise and is capable of operating at frequencies up to 100 MHz. This makes it well-suited for use in consumer and industrial motor control, automotive and robotic applications.
In summary, the FQP7N60 is an effective single-chip power MOSFET integrated circuit utilizing a single MOSFET cell that is designed for low noise and high performance operation. Its castellation sot-23 package offers an efficient and compact form factor. It is suitable for use in high-powered applications due to its low on-state resistances and low gate threshold voltage, making it well-suited for use in consumer and industrial motor control, automotive, and robotic applications.
The specific data is subject to PDF, and the above content is for reference
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