| Allicdata Part #: | FQU2N50BTU-ND |
| Manufacturer Part#: |
FQU2N50BTU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 500V 1.6A IPAK |
| More Detail: | N-Channel 500V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Throu... |
| DataSheet: | FQU2N50BTU Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 3.7V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 30W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 5.3 Ohm @ 800mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.6A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The FQU2N50BTU is a field-effect transistor (FET) that is commonly used in a variety of applications. It is a single MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is able to switch relatively high power at low voltages. FETs are voltage-controlled transistors, and they are generally used to replace regular bipolar junction transistors (BJTs) in applications that require greater input-to-output isolation as well as lower overall power consumption.
Applications for the FQU2N50BTU include power management, such as in an AC-to-DC voltage converter or DC-to-DC voltage converter, motor control, and power supply design. It can also be used in high-frequency switching applications, like pulse-width modulation (PWM) circuits and brushed motor control.
The FQU2N50BTU has a variety of features that make it suitable for a wide range of applications. For instance, its low on-resistance of 175 milliohms makes it ideal for motor control applications. Additionally, its output capacitance of 5500pF makes it suitable for switching high-frequency applications, like brushed motor controls. Finally, it has a drain-source breakdown voltage of 500V, which means that it can be used for high-voltage applications.
The working principle of the FQU2N50BTU is based on the FET\'s gate-to-source voltage, which serves as a control voltage. When a positive voltage is applied to the gate of the FET, the source-to-drain current is increased. Conversely, when a negative voltage is applied to the gate, the source-to-drain current is decreased. Thus, the FQU2N50BTU can be used to switch relatively high currents with a relatively low voltage.
In addition to its low on-resistance, high output capacitance, and breakdown voltage, the FQU2N50BTU also has a maximum drain-source voltage of 50V and a continuous drain current rating of 7.5A. This makes it suitable for a wide range of applications, including motor control, high-frequency switching, and power supply design. Additionally, its maximum power dissipation rating is 260W, which makes it well-suited to power management applications. Furthermore, its gate-threshold voltage is 2.0V, making it suitable for low-voltage switching applications.
The FQU2N50BTU is a versatile FET that is suitable for a wide range of applications. With its low on-resistance, high output capacitance, and other features, the FQU2N50BTU is a great choice for power management, high-frequency switching, and other applications. Additionally, its working principle is based on the FET\'s gate-to-source voltage, which makes it ideal for operating at low voltages.
The specific data is subject to PDF, and the above content is for reference
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FQU2N50BTU Datasheet/PDF