FQU2N50BTU Allicdata Electronics
Allicdata Part #:

FQU2N50BTU-ND

Manufacturer Part#:

FQU2N50BTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 1.6A IPAK
More Detail: N-Channel 500V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Throu...
DataSheet: FQU2N50BTU datasheetFQU2N50BTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 800mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQU2N50BTU is a field-effect transistor (FET) that is commonly used in a variety of applications. It is a single MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is able to switch relatively high power at low voltages. FETs are voltage-controlled transistors, and they are generally used to replace regular bipolar junction transistors (BJTs) in applications that require greater input-to-output isolation as well as lower overall power consumption.

Applications for the FQU2N50BTU include power management, such as in an AC-to-DC voltage converter or DC-to-DC voltage converter, motor control, and power supply design. It can also be used in high-frequency switching applications, like pulse-width modulation (PWM) circuits and brushed motor control.

The FQU2N50BTU has a variety of features that make it suitable for a wide range of applications. For instance, its low on-resistance of 175 milliohms makes it ideal for motor control applications. Additionally, its output capacitance of 5500pF makes it suitable for switching high-frequency applications, like brushed motor controls. Finally, it has a drain-source breakdown voltage of 500V, which means that it can be used for high-voltage applications.

The working principle of the FQU2N50BTU is based on the FET\'s gate-to-source voltage, which serves as a control voltage. When a positive voltage is applied to the gate of the FET, the source-to-drain current is increased. Conversely, when a negative voltage is applied to the gate, the source-to-drain current is decreased. Thus, the FQU2N50BTU can be used to switch relatively high currents with a relatively low voltage.

In addition to its low on-resistance, high output capacitance, and breakdown voltage, the FQU2N50BTU also has a maximum drain-source voltage of 50V and a continuous drain current rating of 7.5A. This makes it suitable for a wide range of applications, including motor control, high-frequency switching, and power supply design. Additionally, its maximum power dissipation rating is 260W, which makes it well-suited to power management applications. Furthermore, its gate-threshold voltage is 2.0V, making it suitable for low-voltage switching applications.

The FQU2N50BTU is a versatile FET that is suitable for a wide range of applications. With its low on-resistance, high output capacitance, and other features, the FQU2N50BTU is a great choice for power management, high-frequency switching, and other applications. Additionally, its working principle is based on the FET\'s gate-to-source voltage, which makes it ideal for operating at low voltages.

The specific data is subject to PDF, and the above content is for reference

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