FQU2N80TU

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	550pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	6.3 Ohm @ 900mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	1.8A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The FQU2N80TU is an enhancement-mode N-channel silicone-gate power field effect transistor (FET) manufactured by Fairchild Semiconductor Corporation, California. It is an ideal switch for lightning-fast power switching circuits in low voltage applications, such as LED lighting and automotive electronics. The FQU2N80TU is designed to handle up to 120 V and its maximum collector-emitter voltage is 60 V. This FET can easily switch up to 18 amps at temperatures between −55°C and +150°C.

Application Field

Because of its low on-resistance, high peak drain current, and low gate drive voltage, the FQU2N80TU can easily be included in high speed power switching circuits, which makes it ideal for various types of power electronic applications. These include home appliances, automotive, industrial, and telecom equipment. The FQU2N80TU is widely used in switching applications such as synchronous rectifiers, DC-DC converters, load switch applications and DC-AC inverters.

Working Principle

The FQU2N80TU operates by allowing or blocking current flow between its source and drain terminals by way of its gate terminal. Depending on the applied gate-source voltage, the transistor can be put in either an ON or OFF state. The FQU2N80TU operates as an enhancement-mode N-channel MOSFET, meaning that it requires higher amount of gate-source voltage to turn it on. The FQU2N80TU has an on-resistance of 1.36 Ohms, which reduces gate conduction losses and provides a fast switching action. The gate drive is also very low, which means that the device will switch on faster, as well as minimize ringing and EMI noise.

Design Considerations

When designing a circuit with the FQU2N80TU, there are several important design considerations that must be taken into account. First, the FQU2N80TU should be connected in a source-drain configuration, where the source and drain terminals are connected together and the gate is used for control. Second, the device must be properly heat sunk. Because the FQU2N80TU is capable of handling up to 18 amps and 120 volts, it is important that the transistor is mounted to a heatsink that can dissipate the additional heat generated during operation. Finally, the gate voltage must be properly set in order to prevent any oscillation or false triggering of the device.

Conclusion

The FQU2N80TU is an N-channel silicone-gate power FET and is widely used in a variety of power electronic applications. It can easily handle up to 18 amps and its on-resistance of 1.36 Ohms allows for fast switching action. Designers must take into account several design considerations, as well as ensure that the device is properly heat sunk, to ensure that the FQU2N80TU is functioning properly.

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