Allicdata Part #: | FQU2N90TU-ND |
Manufacturer Part#: |
FQU2N90TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 1.7A IPAK |
More Detail: | N-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Throu... |
DataSheet: | FQU2N90TU Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 7.2 Ohm @ 850mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQU2N90TU is a standard MOSFET transistor created by Fairchild Semiconductor. It is a N-Channel Enhancement Mode FET device with a typical gate-to-source voltage of 30V, a drain-to-source voltage of 60V, and an on-resistance of 4.6 ohms. It has a package type of TO-220 and a maximum current of 2.6A. The FQU2N90TU is primarily used as a power switching device, and as such has a wide range of applications in electrical systems.
One of the most common applications of the FQU2N90TU is in the switching of medium-voltage power circuits. The device is capable of handling high currents, up to the 2.6 amp maximum, and switching high-voltage circuits with ease. This makes the device well suited for use in high-current power inverters, chargers and other similar circuits. Additionally, the device\'s package type of TO-220 makes it suitable for installation directly on a heat sink, allowing large currents to be handled without having to worry about the device overheating.
The FQU2N90TU can also be used in DC motor control circuits. The FET\'s high current handling capabilities and fast switching speed make it ideal for controlling high-current DC motors. The device can be used to implement current limiting and soft-start functions, which are often used for controlling brushless DC motors. Additional applications for the FQU2N90TU include power switching circuits and basic amplifiers.
The working principle of the FQU2N90TU is similar to the common N-Channel Enhancement Mode FET. The device operates using the principle of "enhanced" conduction or depletion mode. When the gate-to-source voltage (Vgs) is below a certain threshold voltage, the device is said to be in "enhanced" conduction mode. In this mode, current will flow between the source and the drain, provided a voltage difference is present.
When the gate-to-source voltage is increased above the threshold voltage, the device is said to be in "depletion" mode. In this mode, the current flow between the source and the drain is partially or completely blocked. The device can be used to control the flow of current by varying the gate-to-source voltage. By controlling the voltage on the gate, the device can be used to control the flow of current in a power circuit, or to control the speed of a DC motor.
The FQU2N90TU is a reliable and cost-effective device for controlling power circuits or DC motors. Its high current handling capabilities, fast switching speed, and small size make it ideal for applications where space or power handling is an issue. The FET\'s ability to be mounted directly to a heat sink with its TO-220 package type also makes it appealing to designers of high-power circuits or motor control systems. With its broad range of applications and ease of use, the FQU2N90TU is a versatile and reliable device for power and motor control circuits.
The specific data is subject to PDF, and the above content is for reference
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