Allicdata Part #: | FQU2N60TU-ND |
Manufacturer Part#: |
FQU2N60TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 2A IPAK |
More Detail: | N-Channel 600V 2A (Tc) 2.5W (Ta), 45W (Tc) Through... |
DataSheet: | FQU2N60TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 4.7 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQU2N60TU is a field effect transistor, more specifically an N-channel enhancement mode MOSFET (metal-oxide semiconductor field-effect transistor). It enables devices to be easily switched on and off electronically and is one of the most crucial components of any electronic system. This article will explore the application fields of the FQU2N60TU and its working principles.
Application field
The FQU2N60TU can be used for multiple applications including switching, amplified sensing, audio and radio circuits, DC-DC converters, line drivers and low-noise amplifiers. It is most commonly used for switching applications, on both the high and low sides of a circuit.
The FQU2N60TU is a switching type MOSFET, meaning it can handle high-current, high-frequency switching events, making it suitable for power circuits. It is ideal for electric motor speed controllers or any other application needing high-current or high-frequency switching. Additionally, the FQU2N60TU has a low gate charge and high-current handle, meaning it is ideal for switching applications with low energy losses, such as Class D amplifiers.
Furthermore, the FQU2N60TU can handle up to 30 volts, which means it is suitable for AC power applications, such as adapting to auxiliary relays for faster switching rates
Working principle
FQU2N60TU MOSFETs work by using a semiconductor layer of an extremely thin barrier material (the ‘gate’) to control current, by isolating the source and drain regions. The transistor itself has three terminals - the gate, source, and drain - and the current flows from the source to the drain.
When a voltage is applied to the gate, it creates an electric field that attracts the electrons in the channel and decreases its resistance. This allows a current to flow from the source to the drain, turning on the transistor. Conversely, a negative voltage will increase the resistance of the channel, turning it off. This ability to switch current on and off by varying the voltage is the heart of the FQU2N60TU and what makes it so useful.
The FQU2N60TU also has a built-in ‘body diode’, which is used to protect the circuit from surges. When the transistor is off and a voltage is applied through the body diode, current flows in the reverse direction, turning the body diode into a protection barrier. This diode is also used as a clamping diode when the transistor is in the on position.
The FQU2N60TU is an excellent choice for many power and switching applications, thanks to its low on-state resistance, high current handling capabilities, and simple design. Its wide range of application fields and general efficiency makes it an indispensable tool for many electrical circuits.
The specific data is subject to PDF, and the above content is for reference
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