FQU2N90TU-WS

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FQU2N90TU-WS is a high voltage lateral N-channel power MOSFET, designed using an advanced PowerMESH TM Multi-Epitaxial planar structure. The device is fabricated in planar technology with self-aligned source and drain series to minimize the on-state resistance and provide abundant gate charge. This high voltage MOSFET is also suitable to be used in high frequency circuits such as high speed switching applications or as a driver for other power MOSFETs and IGBTs.

FQU2N90TU-WS has the following basic applications:

• Lighting and Motor Control,
• Converters, Inverters, and Rectifiers,
• Computer Monitors, TV and Radio,
• Audio and Video amplifiers, and
• Switch-mode power supplies.

FQU2N90TU-WS has a V_ds of 900V and a drain current of 83A. Its R_ds(on) is 0.03Ω. It also has an avalanche energy-capable feature, which makes it suitable for high frequency switching applications. FQU2N90TU-WS has a maximum operating temperature of 150°C and a maximum junction temperature of 175°C.

A MOSFET device works similarly to a BJT but the operating principle is different. Instead of using a conventional NPN or PNP junction, it uses a gate control over a field effect in which the current can flow through the source and drain when voltage is applied to the gate, in other words when the MOSFET is "on". The major benefit to this type of operation is that it is capable of having extremely low forward-channel resistance, R_DS, reducing power dissipation. This also eliminates the need for any bias currents like those needed in BJT devices.

FQU2N90TU-WS is subject to the following operating conditions in order to be effective:

• The maximum drain source voltage is 900V.
• The maximum drain current is 83A.
• The maximum gate voltage is ±25V.
• The maximum junction temperature is 175°C.

FQU2N90TU-WS is specially designed for high voltage and high power operation, which makes it ideal for applications where switching losses are a concern. Its ultra-lightweight design helps in reducing the component complexity and size. Its excess input capacitance and output capacitance, also known as Miller capacitance, helps in controlling the soft turn-on/turn-off edge. This makes FQU2N90TU-WS ideal for high speed switching applications.

FQU2N90TU-WS is also ideal for motor control, computer monitors, television and radio, and audio/video amplifiers. It can be also used for switch-mode power supplies, lighting and converters/inverters/rectifiers. Its avalanche energy capability makes it suitable for high frequency switching applications and other power MOSFETs or IGBTs.

In conclusion, the FQU2N90TU-WS PowerMESHTM Multi-Epitaxial planar lateral N-channel power MOSFET is designed for high voltage and power operation, and suitable for applications where its low on-state resistance and high frequency switching abilities are beneficial. Its ultra-lightweight design makes it ideal for size- and complexity-conscious applications like motor control, computer monitors, TV and radio, audio/video amplifiers, switch-mode power supplies, lighting, converters/inverters/rectifiers.

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