Allicdata Part #: | FS150R07N3E4B11BOSA1-ND |
Manufacturer Part#: |
FS150R07N3E4B11BOSA1 |
Price: | $ 95.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 650V 150A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FS150R07N3E4B11BOSA1 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 86.38770 |
Series: | -- |
Part Status: | Last Time Buy |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 150A |
Power - Max: | 430W |
Vce(on) (Max) @ Vge, Ic: | 1.95V @ 15V, 150A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 9.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors - IGBTs - Modules
The FS150R07N3E4B11BOSA1 is an integrated circuit IGBT module with advanced features. It is part of the BONFETTMOD family of Intelligent High Current IGBT Modules. This module has been developed to meet the increasing demand for high currents and power efficiency in the power electronics industry.
The FS150R07N3E4B11BOSA1 module combines the benefits of IGBT switching, current sensing, and low on-state voltage drop in a single package. It features a compact design, allowing for easy installation with standard power connectors. The module can be used for a wide range of application fields ranging from motor drives, welding systems, renewable energy, battery and fuel cell systems, and servers and telecommunications.
The FS150R07N3E4B11BOSA1 module is designed for in- and outdoor installation. The module has built-in safety features that protect the IC in case of over currents, short circuits, and over temperature conditions by cutting off the current flow and providing optional shut down signals. The module is ideal for high-power application where reliable switching is required.
Working Principle
The FS150R07N3E4B11BOSA1 module is based on IGBT technology, a switch-mode power device. An IGBT is a bidirectional semiconductor switching device that controls the flow of current between two terminals, the emitter and collector. The IGBT is essentially a type of transistor, designed to provide high power switching and control, and is often used in variable speed applications in motor control, variable speed drives, robotics, and the like.
The FS150R07N3E4B11BOSA1 module consists of two separate IGBTs in a half-bridge configuration. This allows the module to control the current flow both ways, and can be used in applications such as motor drives, switching power supplies, or for controlling the speed of a motor. The module can also be used for controlling the power of a motor, as it provides current sensing capabilities, allowing the user to monitor and adjust the current according to their needs.
The FS150R07N3E4B11BOSA1 module has a low on-state voltage drop, offering higher efficiency and power savings. The module also features built-in protection against over current and short circuit conditions, as well as temperature monitoring, making it suitable for high power applications.
The FS150R07N3E4B11BOSA1 module is a reliable and cost-effective solution for applications that require high current switching. It offers high performance, low on-state voltage drop, and high efficiency, making it an ideal choice for the power electronics industry.
The specific data is subject to PDF, and the above content is for reference
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