FS150R17KE3GBOSA1 Allicdata Electronics
Allicdata Part #:

FS150R17KE3GBOSA1-ND

Manufacturer Part#:

FS150R17KE3GBOSA1

Price: $ 259.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT MED PWR ECONOPP-1
More Detail: IGBT Module Trench Field Stop Full Bridge 1700V 24...
DataSheet: FS150R17KE3GBOSA1 datasheetFS150R17KE3GBOSA1 Datasheet/PDF
Quantity: 1000
4 +: $ 235.59900
Stock 1000Can Ship Immediately
$ 259.16
Specifications
Series: EconoPACK™+
Part Status: Not For New Designs
IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 240A
Power - Max: 1050W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
Current - Collector Cutoff (Max): 3mA
Input Capacitance (Cies) @ Vce: 13.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The FS150R17KE3GBOSA1 is one of the semiconductor devices of the type commonly referred to as IGBT modules. IGBT stands for ‘Insulated-Gate Bipolar Transistor’. This type of module combines a MOSFET (metal-oxide-semiconductor field-effect transistor) and a bipolar transistor, which amplifies current to open and close a set of insulated electrical contacts. It is widely used in power control applications, such as motor control, inverters, power switches, and motor drives.

The FS150R17KE3GBOSA1 is designed to handle voltage and current levels of up to 1,700V and 150A. It features a three-phase bridgeless, zero-current switching, and high speed switching. This means that it is capable of high frequency switching, providing improved control of power. At the same time, it is designed to reduce switching losses, allowing it to be used in high power applications. It is also designed to reduce capacitive switching noise, which can cause interference with other nearby devices.

The working principle of the FS150R17KE3GBOSA1 involves the use of a voltage-controlled insulated gate, which is connected to both the gate and the source of the transistor. When a voltage is applied between the gate and source, it turns on the transistor, allowing current to flow from the source to the drain. A higher voltage results in a higher current, and vice-versa. This gate voltage is then used to control the gate current of the transistor, and thereby controlling the flow of current from the source to the drain.

In terms of applications, the FS150R17KE3GBOSA1 module is commonly used in motor control, inverters, power switches, and motor drives. It is capable of providing high frequency switching, reducing switching losses, and reducing capacitive switching noise. This makes it suitable for use in high power applications such as in the automotive, manufacturing, and renewable energy industries. For example, it can be used in automotive inverters, solar inverters, variable frequency drives, and high power motor drives.

Overall, the FS150R17KE3GBOSA1 is a high performance IGBT module designed for use in a wide range of power control applications. It is capable of providing high frequency switching, reducing switching losses, and reducing capacitive switching noise, making it suitable for use in high power applications. It is also designed to handle voltage and current levels of up to 1,700V and 150A, making it suitable for many applications.

The specific data is subject to PDF, and the above content is for reference

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