| Allicdata Part #: | FS150R17KE3GBOSA1-ND |
| Manufacturer Part#: |
FS150R17KE3GBOSA1 |
| Price: | $ 259.16 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOD IGBT MED PWR ECONOPP-1 |
| More Detail: | IGBT Module Trench Field Stop Full Bridge 1700V 24... |
| DataSheet: | FS150R17KE3GBOSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 4 +: | $ 235.59900 |
| Series: | EconoPACK™+ |
| Part Status: | Not For New Designs |
| IGBT Type: | Trench Field Stop |
| Configuration: | Full Bridge |
| Voltage - Collector Emitter Breakdown (Max): | 1700V |
| Current - Collector (Ic) (Max): | 240A |
| Power - Max: | 1050W |
| Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 150A |
| Current - Collector Cutoff (Max): | 3mA |
| Input Capacitance (Cies) @ Vce: | 13.5nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | Yes |
| Operating Temperature: | -40°C ~ 125°C |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | Module |
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The FS150R17KE3GBOSA1 is one of the semiconductor devices of the type commonly referred to as IGBT modules. IGBT stands for ‘Insulated-Gate Bipolar Transistor’. This type of module combines a MOSFET (metal-oxide-semiconductor field-effect transistor) and a bipolar transistor, which amplifies current to open and close a set of insulated electrical contacts. It is widely used in power control applications, such as motor control, inverters, power switches, and motor drives.
The FS150R17KE3GBOSA1 is designed to handle voltage and current levels of up to 1,700V and 150A. It features a three-phase bridgeless, zero-current switching, and high speed switching. This means that it is capable of high frequency switching, providing improved control of power. At the same time, it is designed to reduce switching losses, allowing it to be used in high power applications. It is also designed to reduce capacitive switching noise, which can cause interference with other nearby devices.
The working principle of the FS150R17KE3GBOSA1 involves the use of a voltage-controlled insulated gate, which is connected to both the gate and the source of the transistor. When a voltage is applied between the gate and source, it turns on the transistor, allowing current to flow from the source to the drain. A higher voltage results in a higher current, and vice-versa. This gate voltage is then used to control the gate current of the transistor, and thereby controlling the flow of current from the source to the drain.
In terms of applications, the FS150R17KE3GBOSA1 module is commonly used in motor control, inverters, power switches, and motor drives. It is capable of providing high frequency switching, reducing switching losses, and reducing capacitive switching noise. This makes it suitable for use in high power applications such as in the automotive, manufacturing, and renewable energy industries. For example, it can be used in automotive inverters, solar inverters, variable frequency drives, and high power motor drives.
Overall, the FS150R17KE3GBOSA1 is a high performance IGBT module designed for use in a wide range of power control applications. It is capable of providing high frequency switching, reducing switching losses, and reducing capacitive switching noise, making it suitable for use in high power applications. It is also designed to handle voltage and current levels of up to 1,700V and 150A, making it suitable for many applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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FS150R17KE3GBOSA1 Datasheet/PDF