FS150R12PT4BOSA1

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The FS150R12PT4BOSA1 is a high voltage module based on Insulated Gate Bipolar Transistor (IGBT) technology. This device has a collector-emitter standing voltage (Vc-e) of 12000V, a collector current of 150A and a power dissipation capability of 2000W.

This type of devices is intended for use in dc 400Hz, 1 to 11.5KV aerospace applications, like space chamber and space craft. One of the most important applications of this particular device is rectifier applications, where the power is converted from four phases of ac to direct current.

This device is also suitable in high voltage motor drives and other motor control solutions, as well as other high voltage, high current applications, with very high blocking voltage and high collector current capability.

The working principle of this device is based on the use of two JFETs and two NPN transistors in a four pole structure in order to perform the rectification process. The four IGBTs in the module are triggered into a conducting state by the driving circuit and remain in that state, until the voltage across the gate and emitter terminals reaches a certain level.

This level of voltage is below the gate threshold voltage for the IGBTs and this ensures that the devices do not require a current pulse to Turn on. When the IGBT is turned off, the trapped charges are quickly removed from the gate-emitter junction so that the device is biased off. This is important for maintaining the device\'s blocking capability over a long period of time.

The other important feature of this device is its superior surge current handling capability. The FS150R12PT4BOSA1 IGBTs are designed to handle high surge currents of up to 12kV, while still maintaining the necessary device temperature protection. This is important when using the module in the most demanding applications, where high surge currents are expected.

Finally, the FS150R12PT4BOSA1 IGBT module is equipped with an advanced monitoring and protection system in order to provide the necessary safety to the operator and protect the device against over-temperature or over-current conditions.

In conclusion, the FS150R12PT4BOSA1 IGBT module is an ideal device for high voltage applications, such as the aerospace industry, motor drives and other high current, high voltage applications. This module offers superior performance and reliability, with an advanced monitoring and protection system to ensure safe operation.

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