FS150R12KT4B9BOSA1 Allicdata Electronics
Allicdata Part #:

FS150R12KT4B9BOSA1-ND

Manufacturer Part#:

FS150R12KT4B9BOSA1

Price: $ 136.89
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 650V 150A
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: FS150R12KT4B9BOSA1 datasheetFS150R12KT4B9BOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 124.45200
Stock 1000Can Ship Immediately
$ 136.89
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 150A
Power - Max: 750W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 9.35nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The FS150R12KT4B9BOSA1 is a popular IGBT module designed for use in a variety of application fields. This device is specifically designed for applications requiring high voltage, low loss operations such as motor control and industrial machinery. In this article, we will be discussing the application fields, as well as the working principles, of the FS150R12KT4B9BOSA1.

Application Field

The FS150R12KT4B9BOSA1 is a high-voltage IGBT module that is mainly used in applications such as switching power supplies, motor control, rectifier, inverter, UPS, and variable speed drives. This device is designed for high switching frequencies, low switching losses, and excellent thermal stability. It also has an extended operating temperature range as well as an extensive reverse voltage capability, making it suitable for many different uses.Additionally, the device offers fast switching, low switching loss, low turn-on and turn-off times, and excellent thermal performance. This makes the FS150R12KT4B9BOSA1 an ideal choice for applications that require high-performance components, such as those found in industrial machinery. Furthermore, the device is also suited for demanding environments such as marine, automotive, and off-shore applications.

Working Principle

The FS150R12KT4B9BOSA1 combines two active switching devices: a thyristor and an insulated gate bipolar transistor (IGBT). The thyristor is used for the control of current flow and the IGBT is used for the control of voltage.When a low-level current is applied to the gate of the IGBT, it shuts off its switching device, thereby preventing current from flowing through the load. In contrast, when a higher-level current is applied to the gate of the thyristor, it turns on its switching device, thereby allowing current to flow through the load. The combination of these two control mechanisms allows the user to switch on or off the current through the load as required.Furthermore, the FS150R12KT4B9BOSA1 is designed to provide optimal efficiency, reliability, and safety. It has a built-in active voltage clamping feature which helps protect the device from over-voltage events. Additionally, the module is also designed to provide improved thermal dissipation. This helps to ensure that the device remains cool during operation and is able to handle higher operating temperatures than its competitors.

Conclusion

In conclusion, the FS150R12KT4B9BOSA1 is a high-voltage IGBT module that is specifically tailored for applications requiring high-voltage, low-loss operations. It is capable of providing fast switching, low switching losses, low turn-on and turn-off times, and excellent thermal performance. Furthermore, the module is designed to provide optimal efficiency, reliability, and safety and is well-suited for a variety of applications such as motor control, rectifier, inverter, UPS, and variable speed drives.

The specific data is subject to PDF, and the above content is for reference

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