Allicdata Part #: | FS150R12KT3BOSA1-ND |
Manufacturer Part#: |
FS150R12KT3BOSA1 |
Price: | $ 127.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1200V 200A CHASS MNT |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FS150R12KT3BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 116.32500 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 200A |
Power - Max: | 700W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 150A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 10.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FS150R12KT3BOSA1 Application Field and Working Principle
FS150R12KT3BOSA1 is a member of the FS Module family of Insulated Gate Bipolar Transistors (IGBT). FS modules are semiconductor switches that can be used to control electrical appliances with high levels of accuracy and efficiency. They are important components in high efficiency motor drives, adjustable frequency drives, invertors, and other power management applications.
The FS150R12KT3BOSA1 features a hybrid construction consisting of an insulated gate bipolar transistor (IGBT) and an ultrafast diode, both designed to be forwards compatible with existing designs. The IGBT module is designed with high power semiconductors and rated at 12kV for high voltage applications. It also has a low on-state resistance for greater energy efficiency. The ultrafast diode is designed for fast switching and low VCE losses to ensure a high performance integrated power switch.
FS150R12KT3BOSA1 application field means that this device can be used for high-performance industrial and commercial applications. It can be used for a variety of industrial applications, including motor control, frequency control, motor speed control, and power conversion. It can also be used for telecom, aerospace, medical and military applications.
The working principle of the FS150R12KT3BOSA1 is based on the MOSFETs switching principle. MOSFET transistors allow electric current to flow when control terminal is activated. When a control terminal is “on”, electric current flows through the device, while when the terminal is “off”, it blocks the electric current. The FS150R12KT3BOSA1 also includes other components like built-in body diodes for protection against over-current and short-circuit, integrated gate-to-source and drain-to-source ESD protections, and a low noise, fast switching ultrafast diode.
The FS150R12KT3BOSA1 delivers outstanding electrical performance when used in high voltage and frequency control applications. It can be used for switching control at high power densities, resulting in higher efficiency, which reduces operating costs, improves system reliability and prolongs system life.
In summary, FS150R12KT3BOSA1 is a high performance integrated power switch, suitable for high voltage applications such as motor control, frequency control, motor speed control and power conversion. It features an hybrid construction consisting of an IGBT and an ultrafast diode, and provides excellent electrical performance with high power density and low noise.
The specific data is subject to PDF, and the above content is for reference
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