Allicdata Part #: | FS15R06VL4B2BOMA1-ND |
Manufacturer Part#: |
FS15R06VL4B2BOMA1 |
Price: | $ 14.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT LOW PWR EASY750-1 |
More Detail: | IGBT Module |
DataSheet: | FS15R06VL4B2BOMA1 Datasheet/PDF |
Quantity: | 1000 |
40 +: | $ 12.81990 |
Specifications
Series: | * |
Part Status: | Not For New Designs |
Description
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FS15R06VL4B2BOMA1 application field and working principle
The FS15R06VL4B2BOMA1 is a high voltage and high power module from Infineon Technologies, a global semiconductor company. This module is an integrated gate-commutated thyristor (IGCT) or insulated-gate bipolar transistor (IGBT) with a maximum blocking voltage of 1500V and a maximum current rating of 6A. Its unique design makes it suitable for applications in industrial motor drives, uninterruptible power supplies, electric vehicle inverters, power factor correction, and general induction heating.This module provides many benefits for electronic control applications. It features extremely low switching losses, excellent thermal characteristics, and a low gate current requirement. It also has integrated gate-controlled diode rectifier elements that reduce voltage overshoot during fast switching and improve the module’s efficiency.The working principle of the FS15R06VL4B2BOMA1 is simple yet effective. It consists of two transistors (IGBTs) arranged in a back-to-back configuration, with a gate-controlled diode rectifier element connected to each side. When the gate control signal is turned on, the current will flow through the gate-commutated thyristor to turn on the main power switch. This will enable current to flow in either direction, allowing the device to act as a switch or converter. The built-in diode rectifier element provides protection against voltage reverse-biases, which otherwise could damage the module.The FS15R06VL4B2BOMA1 is a great choice for applications in power electronics due to its safety, reliability, and efficiency. The device offers maximum power of 1500V continuous current, with a peak current of up to 6A. It also has a gate charge of only 30nC, providing fast switching speeds, low electromagnetic interference (EMI) levels, and minimal power losses. The integrated gate-commutated thyristor and built-in diode rectifier elements ensure that heat generated by the device is minimized without compromising performance. Thanks to its low gate charge, fast switching speeds, and low heat losses, the FS15R06VL4B2BOMA1 is an ideal power switch for many industrial, commercial and residential applications.The specific data is subject to PDF, and the above content is for reference
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