Allicdata Part #: | FS150R17PE4BOSA1-ND |
Manufacturer Part#: |
FS150R17PE4BOSA1 |
Price: | $ 161.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 650V 150A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FS150R17PE4BOSA1 Datasheet/PDF |
Quantity: | 1000 |
6 +: | $ 147.22100 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 150A |
Power - Max: | 835W |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 150A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 13.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FS150R17PE4BOSA1 Application Field and Working Principle
A FS150R17PE4BOSA1 module is a general purpose insulated-gate bipolar transistor (IGBT) module designed to be used in a wide range of inverters, converters, and motor drives. It is capable of handling power levels from 0.2 to 5 kW per module and offers excellent performance when switching AC, DC, or PWM signals.
The FS150R17PE4BOSA1 module is constructed with a p-channel type of IGBT that is capable of blocking up to 17 V in the reverse direction. The chip is made of gallium-doped silicon and utilizes a metal-oxide-semiconductor field-effect transistor (MOSFET) as the gate. The IGBT in the FS150R17PE4BOSA1 module has very low on-state loss, which reduces power consumption and increases efficiency.
The working principle of the FS150R17PE4BOSA1 module involves four main steps: conduction, blocking, turn-on, and turn-off. During conduction, current flows through the IGBT and is blocked when the voltage exceeds the breakdown voltage of the device. The current is then turned on and turned off by applying a forward voltage to the gate of the IGBT, thus altering the resistance of the semiconductor junction.
The FS150R17PE4BOSA1 module is widely used in motor drives, such as electric vehicles, motor pumps, and industrial servo machines. It is also used in motor control systems, DC-DC converters, high-frequency inverters, and other systems. It offers excellent performance, with low conduction and switching losses, which enables it to operate with higher efficiency and improved reliability.
The FS150R17PE4BOSA1 module is an excellent choice for applications that require high-frequency switching, low total harmonic distortion (THD), and low input current ripple. Furthermore, it also provides excellent heat dissipation and isolationally allows higher isolation levels of up to 4 kVrms.
In summary, the FS150R17PE4BOSA1 module is a high-performance general purpose IGBT module that is capable of handling power levels from 0.2 to 5 kW. Its performance is excellent and its features offer low conduction and switching losses, improved reliability, and higher isolation levels. It is an ideal choice for motor drives, motor control systems, DC-DC converters, high-frequency inverters, and other applications that require low THD and low input current ripple.
The specific data is subject to PDF, and the above content is for reference
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