Allicdata Part #: | FS150R17N3E4B11BOSA1-ND |
Manufacturer Part#: |
FS150R17N3E4B11BOSA1 |
Price: | $ 136.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 650V 150A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FS150R17N3E4B11BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 124.30500 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 150A |
Power - Max: | 835W |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 150A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 13.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FS150R17N3E4B11BOSA1 is an IGBT module manufactured by Infineon Technologies that is perfect for medium- and high-voltage applications. It comprises a power semiconductor chip embedded in a thermally efficient mounting system, enabling these powerful components to be safely employed in a large range of industrial, commercial and residential environments.
Key features
- Glass-passivated die and planar technology.
- Direct heat bond copper baseplate.
- High junction temperature capability of up to 175°C.
- Integrated isolation baseplate.
Applications
The FS150R17N3E4B11BOSA1 is suitable for a variety of applications, such as:
- Uninterruptible Power Supply (UPS)
- Energy storage systems (ESS)
- Motor drives and control
- Renewable energy
- Power conditioning
- Switch mode power supplies (SMPS)
- Inverters and converters
- Welding equipment
Working principle
The FS150R17N3E4B11BOSA1 uses a combination of IGBTs (Insulated Gate Bipolar Transistor) and a diode in a module package. A single IGBT is typically composed of several transistors, capacitors and diodes, but the FS150R17N3E4B11BOSA1 has all of these components integrated into a single package.
The IGBT switches are employed to control the current flow by inducing a high frequency switching operation. An IGBT is comprised of two terminals, the gate, and collector. The gate is used to control the current flow, while the collector is used to draw off the excess current. When the gate is given a high voltage, the electrons will flow in from the collector to the gate, connecting the two and allowing for current flow. When the gate is no longer supplied with a voltage, the electrons will flow away, disconnecting the gate and collector and stopping the current flow.
The diode embedded in the FS150R17N3E4B11BOSA1 can be thought of as an electronic version of a one-way valve. It is used to protect the module from reversal in voltage. The diode will not permit any current to flow in the reverse direction, eliminating the possibility of damage due to excessive voltage.
Conclusion
The FS150R17N3E4B11BOSA1 module is a powerful and reliable IGBT module that can be used for a wide variety of industrial, commercial, and residential applications. Its combination of a high junction temperature capability and robust baseplate makes it an excellent option for high-voltage operations. Its integrated components also mean that it requires minimal additional wiring, and its direct heat bond copper baseplate makes mounting efficient and secure.
The specific data is subject to PDF, and the above content is for reference
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