FS150R17N3E4B11BOSA1 Allicdata Electronics
Allicdata Part #:

FS150R17N3E4B11BOSA1-ND

Manufacturer Part#:

FS150R17N3E4B11BOSA1

Price: $ 136.74
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 650V 150A
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: FS150R17N3E4B11BOSA1 datasheetFS150R17N3E4B11BOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 124.30500
Stock 1000Can Ship Immediately
$ 136.74
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 150A
Power - Max: 835W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 13.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The FS150R17N3E4B11BOSA1 is an IGBT module manufactured by Infineon Technologies that is perfect for medium- and high-voltage applications. It comprises a power semiconductor chip embedded in a thermally efficient mounting system, enabling these powerful components to be safely employed in a large range of industrial, commercial and residential environments.

Key features

  • Glass-passivated die and planar technology.
  • Direct heat bond copper baseplate.
  • High junction temperature capability of up to 175°C.
  • Integrated isolation baseplate.

Applications

The FS150R17N3E4B11BOSA1 is suitable for a variety of applications, such as:

  • Uninterruptible Power Supply (UPS)
  • Energy storage systems (ESS)
  • Motor drives and control
  • Renewable energy
  • Power conditioning
  • Switch mode power supplies (SMPS)
  • Inverters and converters
  • Welding equipment

Working principle

The FS150R17N3E4B11BOSA1 uses a combination of IGBTs (Insulated Gate Bipolar Transistor) and a diode in a module package. A single IGBT is typically composed of several transistors, capacitors and diodes, but the FS150R17N3E4B11BOSA1 has all of these components integrated into a single package.

The IGBT switches are employed to control the current flow by inducing a high frequency switching operation. An IGBT is comprised of two terminals, the gate, and collector. The gate is used to control the current flow, while the collector is used to draw off the excess current. When the gate is given a high voltage, the electrons will flow in from the collector to the gate, connecting the two and allowing for current flow. When the gate is no longer supplied with a voltage, the electrons will flow away, disconnecting the gate and collector and stopping the current flow.

The diode embedded in the FS150R17N3E4B11BOSA1 can be thought of as an electronic version of a one-way valve. It is used to protect the module from reversal in voltage. The diode will not permit any current to flow in the reverse direction, eliminating the possibility of damage due to excessive voltage.

Conclusion

The FS150R17N3E4B11BOSA1 module is a powerful and reliable IGBT module that can be used for a wide variety of industrial, commercial, and residential applications. Its combination of a high junction temperature capability and robust baseplate makes it an excellent option for high-voltage operations. Its integrated components also mean that it requires minimal additional wiring, and its direct heat bond copper baseplate makes mounting efficient and secure.

The specific data is subject to PDF, and the above content is for reference

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