Allicdata Part #: | FS15R12VT3BOMA1-ND |
Manufacturer Part#: |
FS15R12VT3BOMA1 |
Price: | $ 13.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 15A |
More Detail: | IGBT Module Three Phase Inverter 1200V 24A 86W Ch... |
DataSheet: | FS15R12VT3BOMA1 Datasheet/PDF |
Quantity: | 1000 |
40 +: | $ 12.23960 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 24A |
Power - Max: | 86W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 15A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 1.1nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FS15R12VT3BOMA1 module is a type of insulated-gate bipolar transistor (IGBT) designed to handle high current loads. It is mainly used in applications such as inverters, converters, drive circuits, and servo circuits. The module has a high blocking voltage capability of 1,200 volts and a low on-state resistance, making it ideal for high current applications.
An IGBT is a type of transistor that combines the characteristics of a bipolar junction transistor (BJT) and a field-effect transistor (FET). Its structure consists of two parts: an N-type FET in the front and a PNP-type BJT in the back, which are connected by a shared gate. This gate is insulated from the other layers, thus enabling to control the flow of current. The FET part has very low resistance in the case of n-channel and high resistance in the case of p-channel transistors. The BJT part is used for switching at higher voltages and currents. By combining both parts, IGBTs can handle large currents and often have a much higher switching frequency than BJTs and FETs.
The FS15R12VT3BOMA1 module is an advanced IGBT module that provides superior performance compared to conventional IGBTs and MOSFETs. It has a low total power dissipation and is designed to reduce conduction and switching losses. The module uses advanced IGBT technology, which minimizes losses at higher frequencies and higher temperatures. The module also has an active emitter-controlled diode that provides high reverse blocking capability and low reverse current.
The FS15R12VT3BOMA1 module is designed to operate in switching circuits in three distinct states: the on-state, the off-state, and the linear state. In the on-state, the current flows from the collector to the emitter and is controlled by the gate voltage. In the off-state, the current is blocked and the gate voltage must reach a specific threshold before the current can flow again. In the linear state, the IGBT behaves like a voltage-controlled resistor, and an increase in the gate voltage will result in a higher current.
The FS15R12VT3BOMA1 module can be used in motor controls, renewable energy systems, AC power supplies, UPSs, converter circuits, and other high-current applications. It is designed to operate at high temperatures up to 175°C and has a superior switching frequency response compared to other IGBT modules. The module also provides improved gate charge and di/dt capabilities.
In conclusion, the FS15R12VT3BOMA1 module is a high-performance IGBT module intended for use in applications requiring high current and high switching speeds. It is designed to reduce losses and provide improved gate charge and di/dt capabilities. The module is suitable for a wide range of applications, such as motor controls, renewable energy systems, AC power supplies, UPSs, converter circuits, and more.
The specific data is subject to PDF, and the above content is for reference
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