Allicdata Part #: | FS150R12KE3BOSA1-ND |
Manufacturer Part#: |
FS150R12KE3BOSA1 |
Price: | $ 136.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1200V 150A |
More Detail: | IGBT Module NPT Three Phase Inverter 1200V 200A 70... |
DataSheet: | FS150R12KE3BOSA1 Datasheet/PDF |
Quantity: | 21 |
1 +: | $ 124.00300 |
Series: | -- |
Part Status: | Active |
IGBT Type: | NPT |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 200A |
Power - Max: | 700W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 150A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 10.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The FS150R12KE3BOSA1 is a part of the family of Insulated Gate Bipolar Transistor (IGBT) modules that are designed for high power applications. IGBTs are ideal for applications that require a high current, high voltage and low losses with low switching losses.
Application Field
The FS150R12KE3BOSA1 IGBT module is suitable for many applications that require higher power and higher voltage. This type of module is commonly used in industrial automation and control, wind power applications, switching power supplies, and motor drives. It can also be used in high voltage switchgear, UPS/inverter systems, and other high power applications that require higher voltage and low losses.
Working Principle
An IGBT module consists of several insulated gate bipolar transistors (IGBTs) in one package. Each IGBT includes a PN junction that acts like a diode and has its own driving circuit. The principle of the IGBT module is to provide a path for current flow between two terminals, called the emitter and collector. As the voltage between the emitter and collector is increased, a current is created, allowing the IGBT to switch on and off. When the IGBT is off, no current can pass through the device, and when the IGBT is on, current can pass through it.
The FS150R12KE3BOSA1 IGBT module offers low switching losses and a high voltage rating of up to 1200V. It also features a high current rating of 150A, making it suitable for high power applications. It has a commutation speed of 600 Mbps and a dV/dt rating of up to 3000 V/ms, enabling it to handle higher frequency applications.
The IGBT module contains two main components: the main board, which houses the IGBTs and the gate drive circuit, and the control board, which contains the gate driver, a timer, and the control logic. The gate drive circuit provides the necessary power to the IGBTs, while the control logic turns the IGBTs on and off. The timer is used to set the time when the IGBTs turn on and off. This ensures that the device operates at the desired frequency and that it runs as efficiently as possible.
The FS150R12KE3BOSA1 IGBT module is suitable for many high power applications. Its high current, voltage, and dV/dt ratings make it ideal for industrial automation, motor drives, and switchgear, UPS/inverter systems, and other high power applications that require higher voltage and low losses.
The specific data is subject to PDF, and the above content is for reference
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