FS150R12KE3BOSA1 Allicdata Electronics
Allicdata Part #:

FS150R12KE3BOSA1-ND

Manufacturer Part#:

FS150R12KE3BOSA1

Price: $ 136.40
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE 1200V 150A
More Detail: IGBT Module NPT Three Phase Inverter 1200V 200A 70...
DataSheet: FS150R12KE3BOSA1 datasheetFS150R12KE3BOSA1 Datasheet/PDF
Quantity: 21
1 +: $ 124.00300
Stock 21Can Ship Immediately
$ 136.4
Specifications
Series: --
Part Status: Active
IGBT Type: NPT
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 200A
Power - Max: 700W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 10.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FS150R12KE3BOSA1 is a part of the family of Insulated Gate Bipolar Transistor (IGBT) modules that are designed for high power applications. IGBTs are ideal for applications that require a high current, high voltage and low losses with low switching losses.

Application Field

The FS150R12KE3BOSA1 IGBT module is suitable for many applications that require higher power and higher voltage. This type of module is commonly used in industrial automation and control, wind power applications, switching power supplies, and motor drives. It can also be used in high voltage switchgear, UPS/inverter systems, and other high power applications that require higher voltage and low losses.

Working Principle

An IGBT module consists of several insulated gate bipolar transistors (IGBTs) in one package. Each IGBT includes a PN junction that acts like a diode and has its own driving circuit. The principle of the IGBT module is to provide a path for current flow between two terminals, called the emitter and collector. As the voltage between the emitter and collector is increased, a current is created, allowing the IGBT to switch on and off. When the IGBT is off, no current can pass through the device, and when the IGBT is on, current can pass through it.

The FS150R12KE3BOSA1 IGBT module offers low switching losses and a high voltage rating of up to 1200V. It also features a high current rating of 150A, making it suitable for high power applications. It has a commutation speed of 600 Mbps and a dV/dt rating of up to 3000 V/ms, enabling it to handle higher frequency applications.

The IGBT module contains two main components: the main board, which houses the IGBTs and the gate drive circuit, and the control board, which contains the gate driver, a timer, and the control logic. The gate drive circuit provides the necessary power to the IGBTs, while the control logic turns the IGBTs on and off. The timer is used to set the time when the IGBTs turn on and off. This ensures that the device operates at the desired frequency and that it runs as efficiently as possible.

The FS150R12KE3BOSA1 IGBT module is suitable for many high power applications. Its high current, voltage, and dV/dt ratings make it ideal for industrial automation, motor drives, and switchgear, UPS/inverter systems, and other high power applications that require higher voltage and low losses.

The specific data is subject to PDF, and the above content is for reference

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