Allicdata Part #: | FS50R06KE3BOSA1-ND |
Manufacturer Part#: |
FS50R06KE3BOSA1 |
Price: | $ 43.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT LOW PWR ECONO2-6 |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FS50R06KE3BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 39.95080 |
Series: | EconoPACK™ 2 |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 70A |
Power - Max: | 190W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 50A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 3.1nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FS50R06KE3BOSA1 Application Field and Working Principle
I GTs are widely used in power electronics due to their robustness and very fast switching time. The FS50R06KE3BOSA1 is a IGBT tandem module made by Infineon Technologies. This module uses integrated Intelligent Power Module (IPM) technology in order to precisely control current and voltage in power switching applications.
Application Field
Due to its very fast switching time and robust design, the FS50R06KE3BOSA1 is widely used in a variety of applications, from solar energy to motor control and power supplies.
- Solar Power Inverters: This IGBT module is used in solar power inverters in order to convert DC to AC current.
- High Voltage Switched Mode Power Supplies (SMPS): The module is used in high voltage SMPS applications, where fast and efficient switching is required.
- Motor Control: The FS50R06KE3BOSA1 can be used in motor control applications, to quickly switch current and voltage to operate the motor.
Working Principle
The FS50R06KE3BOSA1 IGBT module uses a combination of an insulated gate bipolar transistor (IGBT) and an integrated diode in order to accurately control current and voltage. The IGBT is composed of two layers of semiconductor material: the emitter and the collector. The emitter is connected to a conductive gate, which serves as a switch to control the flow of electrons. When the gate is activated, the current flows between the two layers, creating a small amount of power.
The integrated diode of the module works by providing protection to the IGBT from short currents. This diode limits the current from flowing through the IGBT when the gate is inactive, thus preventing the IGBT from taking damage.
The IPM technology of the FS50R06KE3BOSA1 also includes a number of control circuits for more precise control of the current and voltage. These circuits regulate the voltage, current, and temperature to ensure the module runs at its optimal efficiency.
The FS50R06KE3BOSA1 module is designed to withstand high temperature, thanks to its robust and reliable design. It also features a wide range of operating temperatures and voltages, allowing it to be used in a variety of applications.
Conclusion
The FS50R06KE3BOSA1 IGBT tandem module is a reliable and robust module which can be used in a variety of applications, from solar energy to motor control, and power supplies. Its IPM technology allows for precise control of voltage and current. It is designed to withstand high temperature and comes with a wide range of operating temperatures and voltages, making it ideal for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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