Allicdata Part #: | FS50R07N2E4B11BOSA1-ND |
Manufacturer Part#: |
FS50R07N2E4B11BOSA1 |
Price: | $ 44.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT LOW PWR ECONO2-6 |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FS50R07N2E4B11BOSA1 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 39.99090 |
Series: | EconoPACK™ 2 |
Part Status: | Last Time Buy |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 70A |
Power - Max: | 190W |
Vce(on) (Max) @ Vge, Ic: | 1.95V @ 15V, 50A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 3.1nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FS50R07N2E4B11BOSA1 is a module from the IGBT Transistors category, primarily used in applications requiring a low forward voltage, high switching speed, and high output current.
This IGBT module is an insulated gate bipolar transistor (IGBT) integrated device with a low-voltage module made up of two N-channel power MOSFETs, two p-channel IGBTs, and two high-voltage collector-emitter braid packages which are able to switch power in a wide range of voltages.
The FS50R07N2E4B11BOSA1 features an impressive avalanche rating of 700V continuous and 4ms off-state withstand rating of 1200V for increased safety. This IGBT module has a maximum blocking voltage of 1000V, a maximum collector current of 50A, and a total gate charge of 28nC.
The FS50R07N2E4B11BOSA1 is highly energy efficient, achieving over 97% efficiency when loaded. This also helps to reduce heating and prolong the lifespan of the IGBT module. Additionally, this IGBT module offers fast, clean switching to reduce the amount of noise generated.
The FS50R07N2E4B11BOSA1 is able to deliver high-speed switching, high power and high efficiency in a wide range of applications. As its thermal design current is 300A, this IGBT module can be used in electric power plants, traction motors, motor control, solar inverters, and UPS systems.
The FS50R07N2E4B11BOSA1 IGBT module has a working principle of negative temperature coefficient. It uses a temperature-dependent resistor for bandgap voltage regulation, producing a current that is proportional to the temperature of the IGBT’s junction. By controlling the current, the module can modulate the current going through the IGBT and thus, regulate the voltage applied.
The combination of fast switching, low forward voltage, high output current, and high efficiency make the FS50R07N2E4B11BOSA1 IGBT module an ideal solution for a wide range of applications. It offers stability and reliable performance for industrial operations, making it is a great choice for those who require a high-power solution in an efficient and compact package.
The specific data is subject to PDF, and the above content is for reference
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