Allicdata Part #: | FS50R12KT4B11BOSA1-ND |
Manufacturer Part#: |
FS50R12KT4B11BOSA1 |
Price: | $ 53.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT LOW PWR ECONO2-6 |
More Detail: | IGBT Module Trench Field Stop Full Bridge 1200V 50... |
DataSheet: | FS50R12KT4B11BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 48.85780 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Full Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 50A |
Power - Max: | 280W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 50A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 2.8nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FS50R12KT4B11BOSA1 module is a type of IGBT (Insulated Gate Bipolar Transistor). As such, it is part of the family of transistors which allow for the control of current and voltage in electronic devices, bridging the gap between the analogue and digital worlds. IGBT are hybrid transistors, combining the best of both MOSFET and bipolar transistors.
Due to their ability to switch between high and low frequency signals quickly, they are becoming increasingly popular alternatives to traditional MOSFET and bipolar transistors, especially for power electronics applications. This is why the FS50R12KT4B11BOSA1 module is ideal for variable frequency drives, inverters, motor drives, adjustable speed drives, and any other application which require control of voltage and current.
The working principle of IGBTs is simple yet powerful. IGBTs are essentially made of three parts: the gate, the emitter and the collector. The collector is governed by the emitter and the emitter is in turn controlled by the gate. The emitter is connected to the power source and the gate is connected to the control board. When the control board is activated, a current is generated which activates the emitter. This, in turn, activates the collector, allowing the current to flow through it.
The FS50R12KT4B11BOSA1 module works on the principle of voltage-controlled current flow. This means that the collector can be used as a “gate” to control the amount of current that can be supplied to the power source. The IGBT is turned on and off by regulating the voltage to the gate. This creates a controllable and efficient power flow.
Due to its high efficiency, the FS50R12KT4B11BOSA1 module is an ideal choice for applications where the need for precise control is paramount. As it is capable of controlling the current at both high and low frequencies, it is particularly useful for applications such as HVAC (heating, ventilation, and air conditioning) systems, where precise control of temperature is important. It can also be used in microelectronics and power regulation systems.
The FS50R12KT4B11BOSA1 module is also a great choice for systems which require a good level of efficiency. As it is made up of semiconductors, it is capable of handling a large amount of power without any issues. Furthermore, due to its relatively low cost, it has become increasingly popular in many applications.
The FS50R12KT4B11BOSA1 module is a great example of the power and versatility of IGBTs. With its ability to switch current on and off quickly, it is ideal for applications which require precise control. Furthermore, its high efficiency and low cost make it an attractive choice for many electronic devices. The FS50R12KT4B11BOSA1 module is a reliable and versatile IGBT module which is sure to be a great addition to any electronics system.
The specific data is subject to PDF, and the above content is for reference
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