Allicdata Part #: | FS50R17KE3B17BOSA1-ND |
Manufacturer Part#: |
FS50R17KE3B17BOSA1 |
Price: | $ 77.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT LOW PWR ECONO2-6 |
More Detail: | IGBT Module Trench Field Stop Full Bridge 1700V 82... |
DataSheet: | FS50R17KE3B17BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 70.07700 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Full Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 82A |
Power - Max: | 345W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 50A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 4.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The FS50R17KE3B17BOSA1 is a transistor module manufactured by Infineon Technologies. It is part of the family of insulated gate bipolar transistors (IGBTs) and is a high power discrete switching device. This module is ideal for applications such as variable-speed motor drives, induction heating systems, industrial inverters, UPS, telecommunications, line-commutated converters and high voltage DC (HVDC) power transmission systems.
The FS50R17KE3B17BOSA1 is a 600V press fit IGBT module and has a high current rating of up to 500A, making it suitable for a wide range of applications. The module is equipped with a pressed-in collector nut for easy installation, a robust soldering process, and a wide operating temperature range of -40°C to +150°C. It also has an impressive total conduction loss rating of 1750W.
An IGBT module is an electronic switching device that uses an insulated-gate bipolar transistor (IGBT) as its main component. The IGBT functions by controlling the flow of electrons between two terminals, the collector and the emitter, using an insulated gate electrode. A voltage applied to the gate electrode helps to control the flow of current between the collector and emitter, thus functioning as an electronic switch. IGBTs can switch between different voltages, allowing them to control high currents and voltages.
The FS50R17KE3B17BOSA1 module uses several IGBTs to switch current and can handle up to 500A of current, making it suitable for applications such as motor drives and inverters that require high switching frequencies and high efficiency. This is due to the switching losses being reduced as the overall conduction loss is lower, which helps to improve the efficiency of devices. The module also has built-in protection features, such as short-circuit protection, and temperature sensors that help to improve its overall reliability.
In summary, the FS50R17KE3B17BOSA1 module is a high power discrete switching device that is suitable for a wide range of applications. Its high current and voltage ratings, combined with its built-in protection features, make it an ideal choice for applications that require reliable and efficient switching. This module is a great choice for industrial inverters, UPS systems, motor drives, HVDC power transmission systems and more.
The specific data is subject to PDF, and the above content is for reference
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