FS50R07U1E4BPSA1

Series:	--
Part Status:	Obsolete
IGBT Type:	Trench Field Stop
Configuration:	Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	75A
Power - Max:	230W
Vce(on) (Max) @ Vge, Ic:	1.95V @ 15V, 50A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	95pF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 125°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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Transistors - IGBTs - ModulesThe FS50R07U1E4BPSA1 is a power module with a variety of applications. It is a fast-switching, high-power insulated gate bipolar transistor (IGBT) module with a high reliability rating.The module consists of a high voltage IGBT, integrated speed diode, and control circuit, all designed on a printed circuit board (PCB). The IGBT module is designed to provide superior performance in the most demanding switch applications. The IGBT is designed to switch higher currents and faster than other transistor types while providing superior thermal performance.ApplicationsThe FS50R07U1E4BPSA1 is used in many different applications such as switching power supplies, motor control, welding machines, and inverters. It is suitable for use in high power applications, as it can be used to switch a range of currents. The power module is also suitable for applications where fast switching is required, since it can switch faster than other transistor types. Additionally, due to its reliable design, it is suitable for use in safety-critical applications.Working PrincipleThe FS50R07U1E4BPSA1 is designed to operate using insulated gate bipolar transistor (IGBT) technology. An IGBT is a transistor that is made up of two different sections, the emitter and collector. The emitter specializes in carrying electrons from the power source, while the collector acts as an outlet for the electrons. The IGBT module consists of an IGBT, a diode, and a control circuit.The IGBT works by operating as a voltage-controlled gate device. When a voltage is applied across the gate, current can flow from the collector to the emitter and the diode will turn on. When the gate voltage is lowered, the current flow between the collector and the emitter stops and the device turns off.The control circuit controls the voltage applied to the gate and provides feedback to the user about the condition of the device. The control circuit and the gate voltage provide the ability to switch the device on and off in a safe, timely manner.ConclusionThe FS50R07U1E4BPSA1 is a high-power insulated gate bipolar transistor (IGBT) module designed to provide superior performance in the most demanding switching applications. The IGBT module consists of an IGBT, integrated speed diode, and control circuit, all designed on a printed circuit board (PCB). The module is designed to switch higher currents and faster than other transistor types while providing superior thermal performance. The module is suitable for use in switching power supplies, motor control, welding machines, inverters, and other safety-critical applications.

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