Allicdata Part #: | FS50R07N2E4BOSA1-ND |
Manufacturer Part#: |
FS50R07N2E4BOSA1 |
Price: | $ 43.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT LOW PWR ECONO2-6 |
More Detail: | IGBT Module Full Bridge Inverter 650V 70A 190W Ch... |
DataSheet: | FS50R07N2E4BOSA1 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 39.29790 |
Series: | -- |
Part Status: | Last Time Buy |
IGBT Type: | -- |
Configuration: | Full Bridge Inverter |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 70A |
Power - Max: | 190W |
Vce(on) (Max) @ Vge, Ic: | 1.95V @ 15V, 50A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 3.1nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The FS50R07N2E4BOSA1 IGBT module is a programmable power module designed for small- and medium-scale applications. The module combines a full-bridge IGBT with a semiconductor package to provide high-performance power configurations. This power module can be used in a wide range of applications such as motor control, power switching, AC-DC conversion, and more.
The FS50R07N2E4BOSA1 IGBT module includes two gate driver stages. The first stage is a fast-switching driver that can produce switching times of up to five nanoseconds. The second stage is a low-power gate driver that can output a signal that is compatible with low operating frequencies. Both gate driver stages are protected against short circuits and overcurrent by their respective safety features.
The IGBT module also features high-frequency switching capabilities. It has the ability to switch at frequencies up to 600kHz, allowing for faster switching speeds and higher system performance. This module also features soft switching technology, allowing for reduced switching loss without compromising performance. Furthermore, the modules support a wide range of configurable gate current and voltage.
The working principle of the FS50R07N2E4BOSA1 IGBT module is based on the use of two IGBTs. The two IGBTs are connected in series in a bridge configuration, with each one controlling one half of the circuit. This two-transistor configuration ensures that the IGBT module can handle higher voltages and currents when compared to a single IGBT.
In addition to its high-performance capabilities, the FS50R07N2E4BOSA1 IGBT module offers several advantages. It is rated for up to 1200V and up to 7A and can be used in both AC and DC circuits. Furthermore, it offers a maximum di/dt of 5A/ns, ensuring fast switching and a high degree of protection against shoot-through currents. Furthermore, the IGBT module can be used for both PWM and linear control.
The FS50R07N2E4BOSA1 IGBT module is designed for small- and medium-scale applications such as motor drives, industrial automation, power switching and AC-DC conversion. It provides a full-bridge configuration and fast switching speeds. It also provides robust high-frequency switching and advanced soft switching technology. All of these features make it ideal for applications that require high performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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