Allicdata Part #: | FS50R07W1E3B11ABOMA1-ND |
Manufacturer Part#: |
FS50R07W1E3B11ABOMA1 |
Price: | $ 29.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULES |
More Detail: | IGBT Module |
DataSheet: | FS50R07W1E3B11ABOMA1 Datasheet/PDF |
Quantity: | 1000 |
24 +: | $ 27.05690 |
Series: | * |
Part Status: | Active |
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The FS50R07W1E3B11ABOMA1 module is a type of insulated gate bipolar transistor (IGBT). It is used for switching, amplifying, and noise cancelling applications. The module is also used for high-frequency noise applications, including automotive, industrial and consumer electronic applications.
The FS50R07W1E3B11ABOMA1 module is an IGBT module composed of two separate die, an IGBT (Insulated Gate Bipolar Transistor) and an FRD (Free-Wheeling Diode). The module is designed to be used in high output power applications, such as high frequency switching. The module offers high input and output voltages, low on-state resistance, low switching losses, and high frequency operation.
The module is composed of a diode, known as a Free Wheeling Diode (FRD), and an IGBT. This design provides a low forward voltage drop and reduces switching losses. The IGBT is a high-speed switching device with low on-state resistance. The diode is a high-speed reverse conduction diode. The two devices are connected in series, with the IGBTs providing the switching action and the FRD providing the current path for the reverse conduction.
The FS50R07W1E3B11ABOMA1 module can be used in a wide range of applications, including switching and amplifying applications. In switching applications, it is commonly used for on/off control, speed control, and in PWM (pulse width modulation) applications. In amplifying applications, it is used to amplify signals and reduce noise. The module can also be used in high-frequency noise applications, such as automotive, industrial, and consumer electronics applications.
The working principle of the FS50R07W1E3B11ABOMA1 module is based on the two separate devices, the IGBT and the FRD. The IGBT is a high-speed switching device with a low on-state resistance. When a gate voltage is applied to the IGBT, it switches on, allowing current to flow from the collector terminal to the emitter terminal. When the gate voltage is no longer applied, the current can only flow through the FRD, and the IGBT switches off.
When used in switching applications, the module is often driven by a pulse-width modulation (PWM) controller. The module is used to control the on/off states of the device. By varying the PWM signal, it is possible to control the speed of the device, regulate the voltage, and limit the current. In amplifying applications, the module is used to amplify the signal and reduce the noise.
The FS50R07W1E3B11ABOMA1 module can be used in a wide range of applications, ranging from simple on/off control in consumer electronics, to high speed switching and noise cancelling in industrial and automotive applications. It is a versatile, high-performance module with low on-state resistance and high frequency operation.
The specific data is subject to PDF, and the above content is for reference
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