FS50R12W2T4B11BOMA1

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	83A
Power - Max:	335W
Vce(on) (Max) @ Vge, Ic:	2.15V @ 15V, 50A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	2.8nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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FS50R12W2T4B11BOMA1 Application Field and Working PrincipleFS50R12W2T4B11BOMA1 modules are popularly used in a range of industrials applications due to their remarkable switching and power efficiency. The modules are able to not only provide rapid turn-off time, but also withstand extreme temperatures and other environmental conditions. FS50R12W2T4B11BOMA1 modules are mostly employed in fields such as electric furnace, plastic extruder, chemical fiber machines, rectifiers, motor control, and various high temperature or large current applications.The main component in FS50R12W2T4B11BOMA1 module is insulated-gate bipolar transistor (IGBT). This component is basically a hybrid of bipolar transistor and field-effect transistor (FET) and is mainly responsible for the excellent performance of FS50R12W2T4B11BOMA1 module. Below will provide more details on its working principle.In general, a junction FET serves as the input part of the IGBT. In the initial state, no gate current is applied and the FET gate voltage is 0V. Thus, no drain current flows in the transistor and the device is in off-State. Once a positive gate-source voltage is applied and reaches a certain threshold, the FET starts to conduct current and simultaneously, an avalanche breakdown occurs in the base-collector junction of the bipolar transistor. This allows the majority of charge carriers to flow from the collector to the emitter, making the IGBT in the conducting state.When the gate voltage is removed or reversed, the reverse-conduction current starts to decrease and becomes zero in the end, resulting in the gate voltage becoming completely offset. After that, the device is in turn-off state and the energy stored in the circuit is almost completely released.The whole switching process of the IGBT is mainly driven by the gate-source voltage, so that it can meet the rapid on/off time requirement of modern high-speed devices. On the other hand, the base-collector breakdown mechanism provides high levels of avalanche energy dissipation, resulting in superb current and voltage ratings of IGBT devices.In conclusion, FS50R12W2T4B11BOMA1 modules contain IGBT components as one of their major components, which allow them to exhibit remarkable properties when used in industrial applications. The IGBT component’s principle of operation is mainly dependent on the gate-source voltage and its base-collector breakdown mechanism, providing users with efficient current and voltage ratings. The excellent features of FS50R12W2T4B11BOMA1 modules make them a reliable choice for various high-temperature, large current or switching applications.

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