FS50R06YL4BOMA1 Allicdata Electronics
Allicdata Part #:

FS50R06YL4BOMA1-ND

Manufacturer Part#:

FS50R06YL4BOMA1

Price: $ 42.99
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT LOW PWR EASY2-1
More Detail: IGBT Module Three Phase Inverter 600V 55A 202W Ch...
DataSheet: FS50R06YL4BOMA1 datasheetFS50R06YL4BOMA1 Datasheet/PDF
Quantity: 1000
20 +: $ 39.07730
Stock 1000Can Ship Immediately
$ 42.99
Specifications
Series: --
Part Status: Not For New Designs
IGBT Type: --
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 55A
Power - Max: 202W
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 200pF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FS50R06YL4BOMA1 is a high-performance IGBT module that delivers excellent switching characteristics, safe operation and high reliability.

The FS50R06YL4BOMA1 is well suited for use in a wide range of applications. These include motor drives, UPS, welding machines, solar inverters, wind turbines, and other high power applications. This module is especially well suited for applications that require a low-voltage operation and high-speed switching capabilities.

The module consists of a single N-channel IGBT and a complementary ultra-fast antiparallel diode. The IGBT is rated at 50 amperes with a maximum output voltage of 600 volts. The device is packaged with a pressed lead metal frame and has an enhanced thermal design. The module is built using the latest high-voltage IGBT fabrication process, ensuring good robustness and maximum current flow.

The FS50R06YL4BOMA1 has two terminal pins for conduction. A positive and a negative are used to control the IGBT. The positive and negative gates are used to turn the switch on and off during a conduction process. When the positive gate is triggered, the IGBT is turned on and current from the positive pin (source) is allowed to flow to the negative pin (drain). When the negative gate is triggered, the IGBT is turned off and no current is allowed to flow.

The primary benefit of the FS50R06YL4BOMA1 is its ability to switch between the high and low voltages at high speed, providing energy efficiency and improved performance in applications where power switching is required. The module also offers low switching losses and a low gate drive voltage, thereby reducing the power losses associated with high-power switching. Additionally, the module is extremely reliable and has a long lifetime due to its durable construction.

The FS50R06YL4BOMA1 is a reliable and efficient IGBT module that is suitable for a wide range of applications. Its low gate drive voltage and low switching losses enable energy savings and high performance in high-power switching applications. The module offers long life and robustness due to its construction. With its high speed and current conduction capabilities, the FS50R06YL4BOMA1 is a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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