FS50R12KE3BOSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FS50R12KE3BOSA1 is a transistor module that is part of a larger family of IGBTs (Insulated Gate Bipolar Transistors). It is manufactured by Fuji Electric and uses a safe, stable insulation structure to provide users with higher system reliability and longer life cycles.

This module features an FS50R12KE3 IGBT with a reverse recovery free diode within the package, making it suitable for various applications. The insulated gate allows the transistor to switch on and off faster than a regular bipolar transistor, which increases efficiency and the life cycle of the component.

The most popular application of FS50R12KE3BOSA1 is motor drive inverters, especially those working with AC motors. It has a current rating of 50A, and a voltage rating of 1200V. Its total power dissipation capabilities reach 130 Watts, and a repetitive peak voltage of 1200V. It is characterized by low collector-emitter saturation voltage of only 1.5V at 25A.

The working principle of these modules is the same as that of all IGBTs. When the terminal gate of the FS50R12KE3 IGBT receives a positive voltage, the built-in diode starts to conduct electricity, allowing current to flow through the load. When the voltage is reversed, the built-in diode again conducts the current, but reverses it, allowing it to flow back through the opposite direction.

FS50R12KE3BOSA1 is also often used for uninterruptible power supplies, adjustable speed drives, and renewable energy systems. Its ability to rapidly switch currents on and off makes it ideal for applications with frequent cycling on and off because of its low switching loss and high speed. It is also thermally efficient and highly resistant to noise, making it a preferred choice even in demanding environments.

In summary, FS50R12KE3BOSA1 is a safe and reliable transistor module with excellent switching properties which is suited for numerous applications. Its insulated gate allows it to switch on and off faster than a regular bipolar transistor, which increases efficiency and the life cycle of the component. It is also thermally efficient and highly resistant to noise, making it a preferred choice even in demanding environments.

The specific data is subject to PDF, and the above content is for reference