FZT717TA Allicdata Electronics

FZT717TA Discrete Semiconductor Products

Allicdata Part #:

FZT717TR-ND

Manufacturer Part#:

FZT717TA

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 12V 3A SOT223
More Detail: Bipolar (BJT) Transistor PNP 12V 3A 110MHz 2W Surf...
DataSheet: FZT717TA datasheetFZT717TA Datasheet/PDF
Quantity: 13000
1000 +: $ 0.24505
2000 +: $ 0.22208
5000 +: $ 0.20676
10000 +: $ 0.19910
Stock 13000Can Ship Immediately
$ 0.27
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 320mV @ 50mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Power - Max: 2W
Frequency - Transition: 110MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: FZT717
Description

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The FZT717TA transistor is a high-performance device of the single bipolar junction type. It is designed to work in a high operating current range and be able to function in a wide range of base currents. The chief advantage of this type of transistor is its high frequency response, allowing it to operate effectively in a wide range of high-frequency applications. It is also noted for its excellent DC characteristics and its low power dissipation.

The FZT717TA has an extended range of emitter-to-base breakdown voltages and a maximum collector current of 3A. It also has an excellent surge current handling capability. Additionally, this transistor is designed for low capacitance, low-power operations making it ideal for use in analog signal conditioning circuits, RF amplifiers, and high-speed switching applications.

The FZT717TA is a n-p-n transistor which utilizes a single base-emitter junction. It has a maximum collector-to-base breakdown of 80V and a maximum reverse-base voltage of 40V. The transistor is built with a high-frequency operation at a wide range of base currents. This device offers excellent response time and preferred for its high input impedance and its low noise characteristics.

The FZT717TA transistor is a voltage-controlled device. It is available in a plastic surface mountable package which can be mounted directly onto the Printed Circuit Board (PCB). This type of transistor is used mainly in high-frequency signal conditioning, detection control circuits and systems, and high-speed switching circuits.

The working principle of the FZT717TA transistor is that it operates with a single base current to modulate the collector voltage. It is essentially a voltage-controlled device since the emissions of electrons from the emitter region creates a current that flows from the collector to the base. This current, the base current, can be used to control the current flow from the collector to the emitter, thus controlling the output voltage. This type of transistor is commonly used in switching and amplifier circuits, as well as in logic device designs.

The FZT717TA transistor is a high-performance device of the single bipolar junction type and is designed for high- frequency applications. It has low capacitance, low-power and excellent surge current-handling ability. The FZT717TA is a voltage-controlled device and is used mainly in high-frequency signal conditioning, detection control circuits and systems and high-speed switching circuits.

The specific data is subject to PDF, and the above content is for reference

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