FZT751QTA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 300mA, 3A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 500mA, 2V
Power - Max:	3W
Frequency - Transition:	140MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223

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Introduction

FZT751QTA is a double transparent gate N-channel enhancement field effect transistor (FETs) that is widely used in many applications. It is made up of two layers, each consisting of a substrate, gate oxide, and gate electrode. The upper layer of the FZT751QTA has a lower threshold voltage than the lower layer, which enables it to be used to control the turn-on and turn-off processes of the FETs. In addition, the device also features excellent thermal and high-frequency characteristics, making it suitable for high-frequency switching applications.

Applications

The FZT751QTA is specifically designed for switching and electrical control systems, particularly those used in consumer electronics, automobiles, and the like. It is widely used for adjusting current, voltage, and power levels in circuits. It is also used for driving motors, controlling actuators, and providing interlocking and monitoring functions in electronics systems. Moreover, it is also used as a raw material to design small power switches, analog contactors, and high-voltage transformers.

Working Principle

The FZT751QTA is an enhancement-mode FET, meaning that the FET only conducts current when the gate-to-source voltage is higher than a certain threshold level. The threshold voltage is determined by the construction of the FET and is generally controlled by its gate oxide layer. When a positive voltageto the gate is applied, it activates the transistor, causing electrons to be attracted to the gate from the source, thereby creating inversion channels that allow current to flow between the source and the drain.When the gate voltage is low, the inversion channels collapse, and the FET does not conduct. This mode of operation is referred to as enhancement-mode switching, and it allows for great control over the parameters of the FET and the system in which it is used.

Advantages

The FZT751QTA has several advantages that make it desirable for use in a wide variety of applications. Firstly, it has a low threshold voltage and high gain, making it ideal for applications that require precise control of current, voltage, and power levels. Secondly, it has excellent thermal and high-frequency characteristics, making it suitable for high-frequency switching applications. Lastly, it is capable of operating at high temperatures, enabling it to be used in harsh environments.

Conclusion

FZT751QTA is a double transparent gate N-channel enhancement field effect transistor (FETs) that is suitable for many applications in the area of switching and electrical control systems. It is capable of providing excellent thermal and high-frequency characteristics, making it ideal for high-frequency switching. Furthermore, it has a low threshold voltage and high gain, which enables it to be used to precisely control current, voltage, and power levels. Moreover, it is capable of operating at high temperatures, enabling it to be used in harsh environments.

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