FZT795ATA Discrete Semiconductor Products |
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Allicdata Part #: | FZT795ATR-ND |
Manufacturer Part#: |
FZT795ATA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 140V 0.5A SOT-223 |
More Detail: | Bipolar (BJT) Transistor PNP 140V 500mA 100MHz 2W ... |
DataSheet: | FZT795ATA Datasheet/PDF |
Quantity: | 2000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 140V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 10mA, 2V |
Power - Max: | 2W |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | FZT795 |
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The FZT795ATA is a single bipolar junction transistor (BJT) that offers excellent switching performances. It is designed for high-frequency switching applications, and its operating temperature range allows it to suit a wide variety of applications. The FZT795ATA can be used in switching power amplifiers, power supplies, and motor controls.
The FZT795ATA is a NPN transistor that has the following features: a low collector-emitter saturation voltage, a low base-emitter voltage, and a low transition frequency. The device also features an ultra high breakdown voltage, which allows for efficient utilization of power. Furthermore, the device is designed to have a low thermal resistance, which ensures it will have a long life.
The FZT795ATA comes with two amounts of maximum collector current: one at 1A and the other at 2A. The transistor also has a very low leakage current. This performance level makes the device suitable for use in high-current switching applications, such as lamp dimmers and motor control.
The FZT795ATA operates according to the principle of electric field effect. When a current is passed through the collector-emitter the electric field generated between them will cause a voltage drop on the base. This voltage drop across the base is known as the base-emitter voltage. The base-emitter voltage turns on the transistor, allowing current to flow from the collector to the emitter. When current is passed from the collector to the emitter, the electric field created across the base-emitter junction reinforces the current flow, making the transistor capable of very high-speed switching.
The FZT795ATA has a number of advantages. It can operate over a wide temperature range, ensuring it will perform reliably in extreme conditions. The device also features a low base-emitter voltage, which helps to keep power dissipation low and ensure a long life. The FZT795ATA is also capable of high-speed switching operations due to its electric field effect.
The FZT795ATA is an excellent choice for high-frequency switching applications. It offers superb switching performance, low power dissipation, and reliable operation over a wide temperature range. It is an ideal choice for those who require a high-performance transistor for their applications.
The specific data is subject to PDF, and the above content is for reference
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