FZT751TA Discrete Semiconductor Products |
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Allicdata Part #: | FZT751TR-ND |
Manufacturer Part#: |
FZT751TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 60V 3A SOT-223 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 3A 140MHz 2W Surf... |
DataSheet: | FZT751TA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 300mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 500mA, 2V |
Power - Max: | 2W |
Frequency - Transition: | 140MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | FZT751 |
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The FZT751TA is an epitaxial planar bipolar NPN transistor with a collector current of 4.5A and an operating voltage of up to 50V. It is often used in switching applications such as motor and lamp drivers as well as high-side switch implementations. The transistor has a low threshold voltage and can operate with a maximum collector-emitter voltage of up to 350V. The FZT751TA is also suitable for use in audio amplifiers and other linear applications.
Bipolar transistors are semiconductor devices that are composed of three regions, a base, a collector, and an emitter. The current flowing through the three regions will depend on the power supply voltage and the biasing of the transistor. A bipolar transistor can be used as either an amplifier or a switch, depending on the application. In amplifier applications, the transistor can be used to increase the current in a signal, while in switching applications, the transistor can be used to control the current in power circuits.
The collector-to-base terminal of a bipolar transistor is the most critical device parameter that determines the performance of the device. It is often referred to as the gain of the transistor and can be increased or decreased by changing the forward bias voltage applied to the base-emitter junction of the transistor. The gain of this particular transistor is typically around 130, although it can vary depending on the biasing conditions.
When a voltage is applied to the base terminal of the FZT751TA, the base-to-collector junction is turned on and current is allowed to flow from the collector to the emitter. This is known as ON or saturation state. When the voltage is removed from the base terminal, the base-to-collector junction is turned off and no current can flow from the collector to the emitter. This is known as the OFF or cutoff state.
The FZT751TA is a very versatile device and can be used in a wide range of applications due to its low threshold voltage, high collector current, and high-voltage rating. This makes it suitable for use in motor and lamp drivers, audio amplifiers, high-side switch implementations, and other switching or linear applications. The transistor is also available in a surface-mount package and is compatible with standard reflow soldering techniques.
The specific data is subject to PDF, and the above content is for reference
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