Allicdata Part #: | FZT789ATC-ND |
Manufacturer Part#: |
FZT789ATC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 25V 3A SOT223 |
More Detail: | Bipolar (BJT) Transistor PNP 25V 3A 100MHz 2W Surf... |
DataSheet: | FZT789ATC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 3A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 10mA, 2V |
Power - Max: | 2W |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | FZT789 |
Description
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The FZT789ATC is a type of bipolar junction transistor (BJT). It is typically used in low-power applications such as switching and amplifying signals. FZT789ATCs are designed to provide low-total gate charge and low gate-to-source capacitance. This makes them ideal for applications that require high speed operations, such as pulse width modulation.The FZT789ATC is composed of three layers of semiconductor materials. The three layers of semiconductor material are known as the emitter, the base, and the collector. Each of these layers is made of semiconductor material with its own width, thickness, and doping levels. The doping levels determine the type of charge that the material is able to carry and the resistance of the material.In order to understand how a FZT789ATC works, it is important to first understand the basics of transistors. A transistor is an electrical switch that allows current to be controlled. The current flows between two terminals (the emitter and collector) and the amount of current that flows is determined by the amount of voltage applied to the base. When the base voltage is high, more current flows between the emitter and collector, and when the base voltage is low, less current flows.When a FZT789ATC is turned on, charge carriers (electrons or holes) are injected into the junction between the emitter and the base. This causes an increase in current flow between the collector and the emitter. To turn off the transistor, the base voltage must be decreased, so that the charge carriers are not injected into the junction anymore. When the base voltage is lowered, the amount of current flowing between the collector and the emitter decreases.The FZT789ATC is used in a variety of applications. It is commonly used in amplifiers, circuits, and switches. The FZT789ATC has a low total gate charge, allowing it to switch quickly and accurately. It also has a low gate-to-source capacitance, which makes it very responsive to control signals. This makes it an ideal choice for applications that require high speed operations, such as pulse width modulation.The FZT789ATC is a versatile and reliable transistor. It is usually used in low-power applications, where accuracy and performance are crucial. With its low total gate charge and low gate-to-source capacitance, it is capable of providing reliable and accurate results in even the most demanding applications.The specific data is subject to PDF, and the above content is for reference
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