Allicdata Part #: | FZT755TC-ND |
Manufacturer Part#: |
FZT755TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 150V 1A SOT223 |
More Detail: | Bipolar (BJT) Transistor PNP 150V 1A 30MHz 2W Surf... |
DataSheet: | FZT755TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 500mA, 5V |
Power - Max: | 2W |
Frequency - Transition: | 30MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | FZT755 |
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The FZT755TC is a NPN transistor in the BJT (Bipolar Junction Transistor) range. It is classified as a single transistor and is designed for use in general purpose amplifier and switching applications. As a PNP type transistor, it is constructed using two doped semiconductor layers coupled together. It consists of three terminals, an emitter, collector and base.
In an NPN transistor like the FZT755TC, the current flows in the majority carrier mode, which is the flow of electrons through the device. When the base voltage increases, more electrons will be injected into the base region and this will produce a larger number of electron-hole pairs in the base region, resulting in more current flowing through the device. This current then flows through the collector and emitter of the device.
The FZT755TC is typically used in applications such as common emitter amplifiers, active filters, oscillators, voltage regulators, signal modulation and switching circuits. It is an ideal device for general purpose amplification and switching applications, due to its low cost and small size.
The FZT755TC provides excellent performance when used in these types of applications, due to the reduced base-emitter voltage and the low collector-emitter saturation voltage. Its ability to switch voltages up to 80V, combined with its maximum Collector Current of 6A, make it an ideal choice for many applications. It is also capable of handling a maximum power dissipation rate of 500mW, making it suitable for applications that need to switch high power devices.
The working principle of the FZT755TC is based on the principle of a transistor, which is a three-terminal semiconductor device. It operates by controlling the amount of current flowing between the base and collector terminals. By increasing the voltage applied to the base terminal, the amount of current flowing through the transistor will increase. Conversely, when the voltage applied to the base terminal is decreased, the amount of current flowing through the transistor will decrease.
The FZT755TC is designed for general purpose amplifier and switching applications, and its versatile nature makes it suitable for a wide range of applications. Its wide range of operating voltages and current limitations also make it an ideal choice for many projects.
The specific data is subject to PDF, and the above content is for reference
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