FZT749TA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	25V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 300mA, 3A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1A, 2V
Power - Max:	2W
Frequency - Transition:	160MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Base Part Number:	FZT749

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Introduction

FZT749TA is a high-gain bipolar junction transistor (BJT) with a single package. It has a high operating temperature, low quiescent current, and a wide range of operating frequencies, making it a versatile choice for a variety of applications, including general purpose switching, amplifying and signal conditioning.

Applications

FZT749TA transistors are most commonly used in analog and communications applications. In the analog design applications, FZT749TA transistors are used as discrete amplifiers, emitter-coupled logic (ECL), frequency multipliers and power converters. FZT749TA transistors can also be used in digital circuitry, such as buffers and line drivers, as they are capable of transferring high-speed signals. At higher frequencies, FZT749TA transistors are often used as low noise amplifiers and attenuators. FZT749TA transistors can also be used in electrical engineering applications. They are commonly used to switch power in high voltage applications, such as power supplies and motor drives. In addition, they are often used as oscillators in audio and radio equipment. Furthermore, as FZT749TA transistors have a low operating temperature, they are also suitable for use in temperature sensitive applications such as medical equipment.

Working Principle

FZT749TA transistors are made of three semiconductor junctions: the base-emitter diode, the collector-base diode, and the collector-emitter junction. When a small current passes through the base-emitter junction, a larger current can be generated across the collector-emitter junction. As the current is amplified by the transistor, it can be used to provide power to devices or trigger other electrical components. When the base-emitter diode is forward-biased, a large current can flow through the collector-emitter diode. This can be used to control a much larger current in the output circuit, allowing for switching and amplification of an input signal. In addition to the three basic junctions, FZT749TA transistors are also equipped with a Base-Emitter Volume Formed Shorting Pin (BVS), which is connected to the base terminal of the transistor. This pin provides a uniform path for current and reduces thermal resistance in the transistor, allowing for improved performance.

Conclusion

In conclusion, FZT749TA transistors are versatile components that can be used in a variety of projects. They have a wide range of application, from discrete amplifiers to power converters. Furthermore, they have a low operating temperature, making them suitable for temperature sensitive applications. FZT749TA transistors are also equipped with a BVS pin, which provides improved performance and reliability.

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