FZT758TC

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	400V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 200mA, 10V
Power - Max:	2W
Frequency - Transition:	50MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Base Part Number:	FZT758

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Introduction

The FZT758TC is a bipolar, NPN, low-power, monolithic integrated circuit transistor. It is commonly used in small signal amplification and switching applications. The FZT758TC has a high MBP – max breakdown voltage of 160V, which allows it to work well with high-voltage circuits, making it a suitable choice for various applications.

Features

The FZT758TC is rated for a current gain hfe of 250-1000, making it suitable for use in circuits where a high gain is desirable. The transistor has a low minimum breakdown voltage of 35mV, allowing it to perform well with very low-voltage signals, making it suitable for applications such as signal amplifiers. The FZT758TC also has a small package outline of 2.6mm x 2.6mm and a low power consumption, making it ideal for space- and power-sensitive applications.

Advantages

The low voltage on the FZT758TC allows it to be used with high-impedance circuits and devices, making it useful for amplifying, switching, and controlling small signals. The high breakdown voltage of the FZT758TC also makes it suitable for working with high-voltage circuits. The small package outline of the FZT758TC enables the use of the transistor in tight spaces, and the low power consumption allows it to be used without significant power loss, making it ideal for use in battery-powered devices.

Applications

The FZT758TC is commonly used in applications that require a small amount of amplification and/or switching. It can be used to provide an amplifier and/or switch to audio circuits, such as headphone amplifiers, receivers, and home theaters. The FZT758TC can also be used in radio-frequency circuits, such as antenna preamplifiers and tone indicators, in order to provide greater gain and/or sensitivity. Its low power consumption also makes it suitable for use in digital circuits, such as logic circuitry, and for supplying power for small devices, such as thermometers and calculators.

Working Principle

The FZT758TC is a transistor, which is a three-terminal device that uses an applied electrical current to control a greater current between two of its terminals, known as the collector and emitter. In the FZT758TC, the middle terminal, known as the base, is used to control the current from the collector to the emitter. When an electrical current is applied to the base, a small voltage drop appears across the base-emitter region, which increases the current flow from the collector to the emitter, allowing greater current to flow through the load connected between the collector and emitter. This effect is known as amplification. The voltage drop between the emitter and collector is known as the collector-to-emitter voltage, or Vce. The current controlled by the base is known as the collector current, or Ic.

Conclusion

The FZT758TC is a bipolar, NPN, low-power, monolithic integrated circuit transistor that is suitable for use in various small signal applications. Its small package outline and low power consumption allow it to be used in device functionality and power supply applications, while its relatively high max breakdown voltage of 160V makes it suitable for use in high-voltage circuits. The FZT758TC also has a high gain and low minimum breakdown voltage that are useful for amplifying low-level signals and working with high-impedance circuits. Its simplicity and small size make it an ideal choice for many applications.

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