Allicdata Part #: | 1242-1189-ND |
Manufacturer Part#: |
GA20JT12-263 |
Price: | $ 29.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | TRANS SJT 1200V 45A |
More Detail: | 1200V 45A (Tc) 282W (Tc) Surface Mount D2PAK (7-Le... |
DataSheet: | GA20JT12-263 Datasheet/PDF |
Quantity: | 254 |
1 +: | $ 26.54190 |
10 +: | $ 24.55360 |
50 +: | $ 22.56280 |
100 +: | $ 20.97020 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | -- |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 1200V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 20A |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3091pF @ 800V |
FET Feature: | -- |
Power Dissipation (Max): | 282W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK (7-Lead) |
Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The GA20JT12-263 is a type of semiconductor device known as a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is classified as a single MOSFET as it consists of one MOSFET along with any necessary supporting components. It is produced in a high-powered TO-263 package and is particularly suited for use in switched-mode power supplies.
MOSFETs are a type of transistor which use an electric field to control the flow of current between two terminals. Unlike junction-type transistors, MOSFETs require no additional external biasing voltage or circuit to operate. This makes them ideal for switched-mode operation as voltage levels can continue to be changed very quickly, as compared with junction transistors.
The GA20JT12-263 is designed for use in high-power switching applications. It has a maximum drain-source voltage of 20V and a maximum drain current of 12A, making it suitable for a variety of switching circuits. It is also designed with a maximum power dissipation of 16W and a maximum temperature rise rate of 3.6K/W. This makes it especially well suited for use in switched-mode power supplies where high current and low power dissipation are required.
The working principle of the GA20JT12-263 is based on the same fundamentals of other MOSFETs. It consists of an oxidised Gate electrode which is insulated from the Source and Drain electrodes by a thin layer of silicon dioxide. When a voltage is applied to the Gate, it causes a change in the electric field between the Source and Drain, which in turn modulates the channel resistance between the two electrodes and allows current to flow.
The GA20JT12-263 is capable of switching at high frequencies and can be used in circuits where timing or frequency control is desired. It is also capable of being used as a low-noise amplifier in radio transmitters and receivers, as well as an oscillator in digital circuits. Additionally, it has a low temperature coefficient and is ideal for use in temperature-dependent applications such as temperature regulating and control circuits.
Thanks to its low power dissipation and high-power capacity, the GA20JT12-263 is an ideal choice for many different electronic circuits. It is capable of switching at high frequencies and can be used in circuits where timing or frequency control is desired. It also has a low temperature coefficient, making it ideal for use in temperature-dependent applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
TCG070WVLSJPPB-GA20 | Kyocera Inte... | 166.38 $ | 1000 | 500NIT, ON-CELL TOUCH, I2... |
GA20JT12-247 | GeneSiC Semi... | 0.0 $ | 1000 | TRANS SJT 1.2KV 20A1200V ... |
GA20SICP12-247 | GeneSiC Semi... | 29.72 $ | 1000 | TRANS SJT 1200V 45A TO247... |
GA201AE3 | Microsemi Co... | 44.6 $ | 1000 | SCRSCR 100V Standard Rec... |
GA20JT12-263 | GeneSiC Semi... | 29.2 $ | 254 | TRANS SJT 1200V 45A1200V ... |
VS-GA200SA60UP | Vishay Semic... | 27.75 $ | 70 | IGBT 600V 200A 500W SOT-2... |
GA20SICP12-263 | GeneSiC Semi... | 43.01 $ | 90 | SIC CO-PACK SJT/RECT 20A ... |
VS-GA200TH60S | Vishay Semic... | 246.38 $ | 1000 | IGBT 600V 260A 1042W INT-... |
GA200SA60U | Vishay Semic... | 0.0 $ | 1000 | IGBT UFAST 600V 100A SOT2... |
GA200SA60S | Vishay Semic... | 0.0 $ | 1000 | IGBT STD 600V 100A SOT227... |
VS-GA200HS60S1PBF | Vishay Semic... | 0.0 $ | 1000 | IGBT 600V 480A 830W INT-A... |
VS-GA200SA60SP | Vishay Semic... | 0.0 $ | 1000 | MODULE IGBT SOT-227IGBT M... |
VS-GA200HS60S1 | Vishay Semic... | 0.0 $ | 1000 | IGBT 600V 480A 830WIGBT M... |
GA200-005WD | TE Connectiv... | 0.0 $ | 1000 | SENSOR PRESS GAUGE 5" H2O... |
GA200-010WD | TE Connectiv... | 0.0 $ | 1000 | SENSOR PRESS DIFF 10" H2O... |
GA200-015WD | TE Connectiv... | 0.0 $ | 1000 | SENSOR PRESS GAUGE 15" H2... |
GA200-001PD | TE Connectiv... | 0.0 $ | 1000 | SENSOR TRANSDUCER 0.250-4... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...