GA20SICP12-247 Allicdata Electronics
Allicdata Part #:

GA20SICP12-247-ND

Manufacturer Part#:

GA20SICP12-247

Price: $ 29.72
Product Category:

Discrete Semiconductor Products

Manufacturer: GeneSiC Semiconductor
Short Description: TRANS SJT 1200V 45A TO247
More Detail: 1200V 45A (Tc) 282W (Tc) Through Hole TO-247AB
DataSheet: GA20SICP12-247 datasheetGA20SICP12-247 Datasheet/PDF
Quantity: 1000
250 +: $ 27.01620
Stock 1000Can Ship Immediately
$ 29.72
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: --
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): --
Rds On (Max) @ Id, Vgs: 50 mOhm @ 20A
Vgs(th) (Max) @ Id: --
Vgs (Max): --
Input Capacitance (Ciss) (Max) @ Vds: 3091pF @ 800V
FET Feature: --
Power Dissipation (Max): 282W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AB
Package / Case: TO-247-3
Description

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Introduction

The GA20SICP12-247 is a single MOSFET specifically designed for a variety of applications in the electrical sector. It has low gate r @drain voltage capabilities with low power consumption and high efficiency, combined with an improved reliability. In this article, we will review the application field and working principle of the GA20SICP12-247.

Application field

The GA20SICP12-247 has wide application fields, including high-frequency rectification, constant transimpedance, LED driving, and power supply. It can be used in power amplifier, acoustics, signal reproduction and other electronics. Its low gate r @drain voltage capabilities provide better signal fidelity, reducing the effects of noise and signal distortion on system performance. In addition, it is suitable for a variety of off-grid applications, for instance uninterrupted power supplies and small scale power systems.

Working principle

The GA20SICP12-247 is a single MOSFET designed with a special gate r @drain voltage. The main advantages of this feature are a reduction of power dissipation, allowing the device to operate at lower levels of energy, and a significant improvement of reliability due to the improved Gate-Drain (G-D) capacitance value, which allows an enhanced immunity to noise. In order to ensure low leakage current values and low G-D capacitance values, the GA20SICP12-247 has been specially designed with a low-threshold voltage (Vth). The device is capable of driving a wide range of loads and provides good immunity to switching noise.

Conclusion

The GA20SICP12-247 is a single MOSFET specifically designed for a wide variety of applications and working principles. Its low gate r @drain voltage capability combined with low power consumption and high efficiency make it an ideal choice for a variety of off-grid applications, including high-frequency rectification, constant transimpedance, LED driving and power supply. In addition, its low Vth ensures low leakage current, while its G-D capacitance provides improved immunity to noise.

The specific data is subject to PDF, and the above content is for reference

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