Allicdata Part #: | GA20SICP12-247-ND |
Manufacturer Part#: |
GA20SICP12-247 |
Price: | $ 29.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | TRANS SJT 1200V 45A TO247 |
More Detail: | 1200V 45A (Tc) 282W (Tc) Through Hole TO-247AB |
DataSheet: | GA20SICP12-247 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 27.01620 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | -- |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 1200V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 20A |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3091pF @ 800V |
FET Feature: | -- |
Power Dissipation (Max): | 282W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247AB |
Package / Case: | TO-247-3 |
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Introduction
The GA20SICP12-247 is a single MOSFET specifically designed for a variety of applications in the electrical sector. It has low gate r @drain voltage capabilities with low power consumption and high efficiency, combined with an improved reliability. In this article, we will review the application field and working principle of the GA20SICP12-247.
Application field
The GA20SICP12-247 has wide application fields, including high-frequency rectification, constant transimpedance, LED driving, and power supply. It can be used in power amplifier, acoustics, signal reproduction and other electronics. Its low gate r @drain voltage capabilities provide better signal fidelity, reducing the effects of noise and signal distortion on system performance. In addition, it is suitable for a variety of off-grid applications, for instance uninterrupted power supplies and small scale power systems.
Working principle
The GA20SICP12-247 is a single MOSFET designed with a special gate r @drain voltage. The main advantages of this feature are a reduction of power dissipation, allowing the device to operate at lower levels of energy, and a significant improvement of reliability due to the improved Gate-Drain (G-D) capacitance value, which allows an enhanced immunity to noise. In order to ensure low leakage current values and low G-D capacitance values, the GA20SICP12-247 has been specially designed with a low-threshold voltage (Vth). The device is capable of driving a wide range of loads and provides good immunity to switching noise.
Conclusion
The GA20SICP12-247 is a single MOSFET specifically designed for a wide variety of applications and working principles. Its low gate r @drain voltage capability combined with low power consumption and high efficiency make it an ideal choice for a variety of off-grid applications, including high-frequency rectification, constant transimpedance, LED driving and power supply. In addition, its low Vth ensures low leakage current, while its G-D capacitance provides improved immunity to noise.
The specific data is subject to PDF, and the above content is for reference
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