GP10YHE3/54

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Diodes are semiconductor devices utilized in a wide range of applications. A single diode is a two-terminal device that features alternating anode and cathode pins, a barrier layer made of either silicon dioxide or silicon carbide between them, and a photon, or minority charge carrier. One of the most common types of single diodes is the GP10YHE3/54. In this article, we will explore the application field and working principle of this particular device.

The GP10YHE3/54 is a popular choice for transistor drivers, FET gate drives, and converter circuit replacement due to its impressive capabilities. The diode features an anode-cathode voltage of 10V and a maximum repetitive peak reverse voltage (VRRM) of 54V. Its operating temperature range is from -55° to +125°C with a rated junction temperature of 150°C. Its reverse recovery time (trr) is at a very fast 3µs, which ensures excellent efficiency and good switching. With an immediate voltage drop of 250mV, the device is a great choice for modern power supply designs and applications.

The GP10YHE3/54 also comes with a low dynamic impedance due to its high total internal capacitance. The diode also has a low junction-to-chip thermal resistance, allowing it to deliver working current with an improved level of efficiency. Physically, it measures l x w x h = 5.1mm x 3.2mm x 1.2mm – making it highly compact and well-suited to a wide range of applications.

The working principle of a single diode is based on the majority and minority charge carriers’ behavior. The semiconductor layer has a very specific reserve voltage, with majority charge carriers always flowing from the anode towards the cathode, and minority charge carriers always flowing from the cathode backwards to the anode. This is because the majority charge carriers flow with the higher forward voltage, while the minority charge carriers have a lower reverse voltage.

At low voltage, the GP10YHE3/54 will allow majority charge carriers to flow from the anode to the cathode, allowing only a fraction of the total current to pass through. As the voltage increases, the current will remain low until it reaches the reserve voltage, if it is higher than the applied potential. If the potential is lower than the reserve voltage, the current will remain low until the peak reserve voltage is reached. After that, the current will sharply increase exponentially.

In conclusion, the GP10YHE3/54 diode is a great choice for transistor drivers, FET gate drives, and converter circuits thanks to its high level of efficiency and low total internal capacitance. Its fast reverse recovery time and rated junction temperature of 150°C makes it suitable for modern power supply designs and applications. The single diode’s working principle is based on the majority and minority charge carriers’ behavior, with majority charge carriers always flowing from the anode towards the cathode, and minority charge carriers always flowing from the cathode backwards to the anode.

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