Allicdata Part #: | GP10J-4005E-M3/73-ND |
Manufacturer Part#: |
GP10J-4005E-M3/73 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 1A DO204AL |
More Detail: | Diode Standard 600V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | GP10J-4005E-M3/73 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101, Superectifier® |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
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!<Diodes, in general, are electronic components used to direct current in a single direction, while preventing the flow of current in the reverse direction. The GP10J-4005E-M3/73 is a specific kind of rectifier diode, which is a two-terminal semiconductor device usually with a low forward voltage drop and very high reverse breakdown voltage. In this article, we will discuss the application field and working principle of the GP10J-4005E-M3/73 diode.
The GP10J-4005E-M3/73 rectifier diode is mostly used in power supply circuits and switching circuits. It is employed in Voltage Regulation Systems, Capacitor Discharge Ignition (CDI) and Transistorized Ignition (TRI) Systems, and industrial electronic gadgets such as motor drives, power inverters, and UPS systems. The rectifier diode is also used for protection in circuits, for detecting AC line interruption, for single-phase bridge full-wave rectification, and for detecting and amplifying transverse vibrations. Moreover, it acts as a shield against high-frequency disturbances and electromagnetic interference.
The working principle of the GP10J-4005E-M3/73 diode can be understood by understanding the concept of PN junction. A PN junction is created when two different types of semiconductors are joined together. These two types of semiconductors are known as p-type and n-type semiconductors. When a potential difference is applied across the two types of semiconductors, current will flow through the junction, allowing one type of charge carrier to cross the junction while other type of charge carrier is blocked. In the case of the GP10J-4005E-M3/73, the diode is usually reverse biased so that the current is blocked in the reverse direction. When it is forward biased, the diode has a very low voltage drop and very high reverse breakdown voltage.
In conclusion, the GP10J-4005E-M3/73 rectifier diode is an electronic component used in a wide range of applications. The diode is mostly used power supply circuits and switching circuits, and it has the property of allowing one type of charge carrier to pass through the PN junction while blocking the other type of charge carrier. Furthermore, it acts as a shield against high-frequency disturbances and electromagnetic interference.
The specific data is subject to PDF, and the above content is for reference
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GP10-4004-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10F-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
GP10J-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4002-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10-4003-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10-4004-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10G-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10J-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
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