Allicdata Part #: | HFA3046B96-ND |
Manufacturer Part#: |
HFA3046B96 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America Inc. |
Short Description: | IC TRANS ARRAY NPN DIFF 14-SOIC |
More Detail: | RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mo... |
DataSheet: | HFA3046B96 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 5 NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 8GHz |
Noise Figure (dB Typ @ f): | 3.5dB @ 1GHz |
Gain: | -- |
Power - Max: | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 10mA, 2V |
Current - Collector (Ic) (Max): | 65mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 14-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 14-SOIC |
Base Part Number: | HFA3046 |
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The HFA3046B96, a High Frequency Amplifier (HFA) manufactured by Harris Semiconductor, belongs to a family of bipolar junction transistors (BJT) specifically designed for radio frequency (RF) applications. While the transistor\'s exact specifications differ from its predecessors and other similar transistors, the device is largely composed of three components: collector, emitter and a base. The HFA3046B96 is ideal for applications such as amplifying signals in communications systems, frequency multiplication, and power amplification.
At its core, the concept of a High-Frequency Amplifier is fairly simple. Here, a collector forms a region of high-resistance that is either charged or not, depending on the emitter. The energy of the electrons travelling from the emitter and into the collector is amplified and converted into a current. When the base is pleased with a small voltage input and current, this allows the activation of the transistor’s flow. As with all such processes, the strength of the signals amplified by the transistor depends on factors such as the area of the electrodes and the gain of the transistor.
When it comes to the HFA3046B96, it’s a transistor with considerable flexibility. Its base provides asymmetric current gain and its emitter maxes out at 120 kHz allowing it to be used in applications requiring a variety of typical RF frequencies – not just in audio. In addition, its collector can sustain temperatures up to 175 degrees without any significant degradation in performance.
This HFA3046B96 transistor can also be used in high-frequency circuit applications. Here, this semiconductor is often used to construct low-noise amplifiers, voltage-controlled oscillators, and in some cases, even switched-mode power converters and power amplifiers. With these, the HFA3046B96 not only has the potential to amplify and control, but it can also be used to drive and shape signals as along as the components in the system are appropriately matched.
The HFA3046B96 transistor is also widely used in transmitting and receiving digital signals. By incorporating this device into the core of their systems, designers can take advantage of its flexibility in amplifying and switching, enabling them to efficiently and accurately process information. Through the use of this device, digital communications systems can send and receive data quickly and reliably, even in extreme field conditions.
The HFA3046B96 is thus a highly versatile transistor capable of accommodating a range of objectives. Whether it is used in an audio application or a high-frequency circuit application, this transistor provides its own unique benefits. With its capability to work well in extreme field conditions, the HFA3046B96 is indeed the ideal choice for many radio frequency applications.
The specific data is subject to PDF, and the above content is for reference
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