HFA3127B96 Allicdata Electronics
Allicdata Part #:

HFA3127B96-ND

Manufacturer Part#:

HFA3127B96

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America Inc.
Short Description: IC TRANS ARRAY NPN 16-SOIC
More Detail: RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mo...
DataSheet: HFA3127B96 datasheetHFA3127B96 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: --
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: HFA3127
Description

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The transistor is a semiconductor device that can amplify, switch, and level shift electrical signals, which makes them widely used in all kinds of electronic devices. The HFA3127B96 belongs to the type of transistor known as a “Bipolar Junction Transistor” or BJT. It is a type of transistor optimized for Radio Frequency (RF) use, which has two terminals usually referred to as the Base and the Collector. When an electrical current is applied to the Base terminal, another, larger current is amplified and allowed to flow through the Collector terminal.

The HFA3127B96 is a special type of BJT because it is designed to operate efficiently at higher frequencies. It has a low harmonic distortion and excellent gain characteristics over a wide range of frequencies, making it ideal for a range of applications such as amplifiers for radio receivers and wireless communications. The device also has a low power dissipation, making it suitable for portable and battery-powered devices where energy efficiency is a major concern.

The working principle behind the HFA3127B96 is based on the current that is allowed to flow between the Base and Collector terminals when the voltage on the Base terminal is increased. This current flow is limited by the addition of a small resistance called the emitter-base junction. As the Base voltage further increases, so does the current flow through the Collector terminal as the emitter-base junction increases its resistance. This increasing resistance means that the current gain eventually saturates, leading to a decrease in the amount of current flowing through the Collector terminal.

In order to keep the current flow constant, it is necessary to increase the Base voltage again. This action increases the amount of current flowing through the Collector terminal and allows the amplifier’s gain to remain constant. This process is repeated constantly in most BJTs, allowing for a much higher gain than is possible with other types of transistors.

The HFA3127B96 is an excellent device for amplifying radio signals due to its high gain and low harmonic distortion. Its excellent gain characteristics make it a good choice for wireless communication applications, while its low power dissipation makes it suitable for battery-powered devices. Thanks to its high performance and low cost, HFA3127B96 is a popular choice for many modern electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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